Method for manufacturing SOI substrate and semiconductor device

ABSTRACT

It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

TECHNICAL FIELD

The present invention relates to silicon-on-insulator (SOI) substrates,semiconductor devices manufactured using SOI substrates andmanufacturing methods thereof. The present invention particularlyrelates to a bonding SOI technique and also relates to SOI substrateswhich are obtained by bonding a single-crystal or polycrystallinesemiconductor layer to a flexible substrate having an insulatingsurface, semiconductor devices manufactured using SOI substrates andmanufacturing methods thereof.

DESCRIPTION OF THE RELATED ART

Integrated circuits have been developed which use a single-crystalsemiconductor substrate called a silicon-on-insulator (SOI) substratethat has a thin single-crystal semiconductor layer over an insulatingsurface, instead of a silicon wafer that is manufactured by thinlyslicing an ingot of a single-crystal semiconductor. When transistorsthat are to be included in an integrated circuit are formed using an SOIsubstrate, parasitic capacitance between drains of the transistors andthe substrate can be reduced and a semiconductor integrated circuit canbe made to have higher performance. Therefore, SOI substrates have beenattracting attention.

As a method for manufacturing SOI substrates, a hydrogen ionimplantation separation method is known (for example, see Reference 1:U.S. Pat. No. 6,372,609). The hydrogen ion implantation separationmethod is a method in which hydrogen ions are implanted into a siliconwafer to form a microbubble layer at a predetermined depth from thesurface, the surface into which hydrogen ions are implanted issuperposed on another silicon wafer, heat treatment is performed tocause separation using the microbubble layer as a cleavage plane, and athin silicon layer (SOI layer) is bonded to the other silicon wafer. Inaddition to the heat treatment for separation of the SOI layer, it isnecessary to perform heat treatment in an oxidizing atmosphere to forman oxide layer on the SOI layer, remove the oxide layer, perform heattreatment at 1000° C. to 1300° C. in a reducing atmosphere to increasebonding strength, and recover a damaged layer on the surface of the SOIlayer.

One of the known examples of semiconductor devices using SOI substratesis disclosed by the present applicant (see Reference 2: JapanesePublished Patent Application No. 2000-12864). It is disclosed that heattreatment at 1050° C. to 1150° C. is necessary also in that case inorder to eliminate trap levels and defects that are caused by stress inan SOI layer.

A conventional method for manufacturing an SOI substrate requires heattreatment at high temperatures of 1000° C. or higher in order tostrengthen a bonding strength between an SOI substrate and an SOI layerand to recover a damaged layer on the surface of the SOI layer.Therefore, it has been impossible to form an SOI layer over a glasssubstrate which is used for manufacture of a liquid crystal panel, asubstrate with an heatresisitant temperature of about 700° C. or aplastic substrate with a lower heatresitant temperature. Even if an SOIlayer is provided over a glass substrate by a hydrogen ion implantationseparation method, there is a problem in that the bonding strength ofthe SOI layer is weak because high-temperature heat treatment forincreasing bonding strength cannot be applied.

A flexible substrate is difficult to be fixed because the flexiblesubstrate has a thin thickness and is easily bent and is difficult tohandle; therefore, there is a problem in that a yield of a semiconductordevice using the flexible substrate is low.

SUMMARY OF THE INVENTION

In view of the aforementioned problems, it is an object of the presentinvention to provide a method for manufacturing an SOI substrate havingan SOI layer that can be used in practical applications with high yieldeven when a flexible substrate such as a glass substrate or a plasticsubstrate is used. Further, it is another object of the presentinvention to provide a method for manufacturing a thin semiconductordevice using such an SOI substrate with high yield.

When a single-crystal semiconductor substrate is bonded to a flexiblesubstrate having an insulating surface to manufacture an SOI substrate,one or both of bonding surfaces are activated, and then the flexiblesubstrate having an insulating surface and the single-crystalsemiconductor substrate are attached to each other. For example, atleast one of the bonding surfaces of the flexible substrate having aninsulating surface and the single-crystal semiconductor substrate isirradiated with an atomic beam or an ion beam. Alternatively, plasmairradiation or a radical treatment is performed. Further, at least oneof the bonding surfaces of the flexible substrate having an insulatingsurface and the single-crystal semiconductor substrate may be subjectedto treatment by oxygen plasma or washing with ozone water to behydrophilic. By such surface treatment, even if temperatures of a heattreatment step is greater than or equal to 250° C. and less than 400°C., different kinds of materials can be easily bonded to each other.

In bonding a single-crystal semiconductor substrate to a flexiblesubstrate having an insulating surface, a silicon oxide layer is formedusing organic silane as a material on one or both of surfaces that areto form a bond. Examples of organic silane that can be used includesilicon-containing compounds, such as tetraethoxysilane (TEOS),tetramethylsilane (chemical formula: Si(CH₃)₄),tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane(OMCTS), hexamethyldisilazane (HMDS), triethoxysilane, andtrisdimethylaminosilane. In other words, in an SOI substrate having astructure in which a single-crystal semiconductor layer (SOI layer) isbonded to a flexible substrate having an insulating surface, a siliconoxide layer which forms a smooth and activated surface is provided as abonding surface on one or both of surfaces that are to form a bond.

The SOI layer that is to be bonded to the flexible substrate having aninsulating surface is obtained by separation in a fragile region formedin the single-crystal semiconductor substrate. The fragile region isformed by irradiating the single-crystal semiconductor substrate withaccelerated ions, which are generated by plasma excitation using a gasof hydrogen, helium, or a halogen typified by fluorine as a source gas.In this case, it is preferable to perform irradiation with a pluralityof ions of a single atom that has different masses or a plurality ofions of a plurality of atoms that has different masses. In the case ofirradiation with hydrogen ions, the hydrogen ions preferably include H⁺,H₂ ⁺, and H₃ ⁺ ions with a high proportion of H₃ ⁺ ions. In the case ofirradiation with ionized helium, the single-crystal semiconductorsubstrate can be substantially doped with He⁺ ions alone even by iondoping without mass separation. Note that the term “substantially” meansthat the single-crystal semiconductor substrate is also doped with aslight amount of ionized atmospheric elements.

In the SOI layer that is to be bonded to the flexible substrate havingan insulating surface, the single-crystal semiconductor substrate issubjected to heat treatment to make the fragile region more fragile forseparation in the fragile region formed in the single-crystalsemiconductor substrate before bonding the single-crystal semiconductorsubstrate to the flexible substrate having an insulating surface. Inthis case, heat treatment is performed while pressure is applied to thesurface of the single-crystal semiconductor substrate using a pressuremember in order to prevent the ions which become a gas, from the fragileregion. Alternatively, an insulating layer is formed on thesingle-crystal semiconductor substrate and heat treatment is performed.

Before bonding the single-crystal semiconductor layer separated from thesingle-crystal semiconductor substrate to the flexible substrate havingan insulating surface, the single-crystal semiconductor substrate isirradiated with the accelerated ions and then heated to form the fragileregion that is a region where a part of the single-crystal semiconductorsubstrate is made to be fragile, whereby the flexible substrate with lowheat resistance and the single-crystal semiconductor substrate arebonded to each other and the SOI substrate can be manufactured. Withthis structure, even when a substrate with low heatresistant temperaturesuch as a plastic substrate is used, the SOI substrate having the SOIlayer which is bonded to the substrate by the bonding portion with highbonding strength can be obtained with high yield. Further, asemiconductor device using the SOI substrate can be manufactured.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 is a cross-sectional view showing a structure of an SOIsubstrate;

FIG. 2 is a cross-sectional view showing a structure of an SOIsubstrate;

FIGS. 3A and 3B are cross-sectional views each showing a structure of anSOI substrate;

FIGS. 4A and 4B are cross-sectional views each showing a structure of anSOI substrate;

FIGS. 5A to 5D are cross-sectional views explaining a method formanufacturing an SOI substrate;

FIGS. 6A to 6D are cross-sectional views explaining a method formanufacturing an SOI substrate;

FIGS. 7A to 7D are cross-sectional views explaining a method formanufacturing an SOI substrate;

FIGS. 8A to 8D are cross-sectional views explaining a method formanufacturing an SOI substrate;

FIGS. 9A to 9E are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIGS. 10A and 10B are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIGS. 11A to 11D are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIGS. 12A and 12B are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIGS. 13A to 13D are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIGS. 14A and 14B are cross-sectional views explaining a method formanufacturing a semiconductor device using an SOI substrate;

FIG. 15 is a block diagram showing a structure of a microprocessorobtained using an SOI substrate;

FIG. 16 is a block diagram showing a structure of an RFCPU obtainedusing an SOI substrate;

FIG. 17 is a plane view exemplifying a case in which SOI layers isbonded to a mother glass used for manufacture of a display panel; and

FIGS. 18A and 18B are views showing an example of a display panelincluding a pixel transistor using an SOI layer.

FIG. 19 is an energy diagram of hydrogen ion species.

FIG. 20 is a diagram showing the results of ion mass spectrometry.

FIG. 21 is a diagram showing the results of ion mass spectrometry.

FIG. 22 is a diagram showing the profile (measured values and calculatedvalues) of hydrogen in the depth direction when the accelerating voltageis 80 kV.

FIG. 23 is a diagram showing the profile (measured values, calculatedvalues, and fitting functions) of hydrogen in the depth direction whenthe accelerating voltage is 80 kV.

FIG. 24 is a diagram showing the profile (measured values, calculatedvalues, and fitting functions) of hydrogen in the depth direction whenthe accelerating voltage is 60 kV.

FIG. 25 is a diagram showing the profile (measured values, calculatedvalues, and fitting functions) of hydrogen in the depth direction whenthe accelerating voltage is 40 kV.

FIG. 26 is a list of ratios of fitting parameters (hydrogen atom ratiosand hydrogen ion species ratios).

Hereinafter, embodiment modes and embodiments of the present inventionare described using drawings. However, the present invention can beimplemented with many different modes, and it is easily understood bythose skilled in the art that the mode and details of the presentinvention can be changed variously unless such changes depart from thespirit and scope of the present invention. Thus, the present inventionis construed without limiting to the description of the embodiment modesand embodiments included in this specification.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment Mode 1

FIG. 1 shows a structure of an SOI substrate according to the presentinvention. In FIG. 1, a base substrate 100 is a substrate which isprovided with a SOI layer in the SOI substrate and which is flexible andhas an insulating surface. As a typical example of the base substrate, aflexible insulating substrate, a flexible metal substrate provided withan insulating layer on the surface, or the like can be given. As theflexible insulating substrate, a plastic substrate formed of PET(polyethylene terephthalate), PEN (polyethylene naphthalate), PES(polyethersulfone), polypropylene, polypropylene sulfide, polycarbonate,polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone,or polyphthalamide, or the like, or paper made of a fibrous material canbe given.

By using a prepreg for the flexible insulating substrate, damage causedby a point pressure or a linear pressure to the SOI substrate and asemiconductor device to be manufactured later can be prevented. Atypical example of the prepreg can be obtained by impregnating a fiberbody such as polyvinyl alcoholic filber, polyester fiber, polyamidefiber, polyethylene fiber, aramid fiber,poly(p-phenylenebenzobisoxazole) fiber, glass fiber, carbon fiber or thelike with a composition obtained by diluting a fluorine resin with anorganic solvent, and then the matrix resin such as an epoxy resin, anunsaturated polyester resin, an polyimide resin, a fluorine resin or thelike, is half-cured by volatilizing the organic solvent by drying.

Further, as the flexible insulating substrate, it is possible to use anyof a variety of glass substrates that are used in the electronicsindustry such as aluminosilicate glass, aluminoborosilicate glass andbarium borosilicate glass.

As the flexible metal substrate provided with an insulating layer on thesurface, a metal film, a metal sheet on which an insulating layer suchas a silicon oxide layer, a silicon nitride layer, a silicon oxynitridelayer, an aluminum nitride layer, or an aluminum oxide layer is formed,or the like can be given. Note that the insulating layer is not limitedto the above-described insulating layers, and the other insulatinglayers can be used as appropriate.

An SOI layer 102 is a single-crystal semiconductor layer, andsingle-crystal silicon is typically used. Alternatively, silicon whichcan be separated from a polycrystalline semiconductor substrate by ahydrogen ion implantation separation method or germanium which can beseparated from a single-crystal semiconductor substrate or apolycrystalline semiconductor substrate by a hydrogen ion implantationseparation method can be used. Still alternatively, a crystallinesemiconductor substrate of a compound semiconductor such as silicongermanium, gallium arsenide, or indium phosphide can be used.

Note that, in this embodiment mode and in the embodiment modes describedafter this embodiment, as a typical example of the SOI layer 102, thesingle-crystal semiconductor layer is used. When the polycrystallinesemiconductor substrate is used instead of the single-crystalsemiconductor substrate, the SOI layer 102 is replaced with apolycrystalline semiconductor layer. When the crystalline semiconductorsubstrate is used instead of the single-crystal semiconductor substrate,the SOI layer 102 is replaced with a crystalline semiconductor layer.

As shown in FIG. 2, a bonding layer (a layer formed at a bondinginterface) 104 having a smooth and activated surface may be providedbetween the base substrate 100 and the SOI layer 102. The SOI substrateshown in FIG. 2 is manufactured by forming the bonding layer 104 havinga smooth and activated surface on a surface of the SOI layer 102 andbonding the bonding layer 104 having a smooth and activated surface tothe base substrate 100. Note that the SOI substrate may be manufacturedby forming the bonding layer 104 having a smooth and activated surfaceon a surface of the base substrate 100 and bonding the bonding layer 104having a smooth and activated surface to the SOI layer 102.

A silicon oxide layer is suitable for the bonding layer 104. Inparticular, a silicon oxide layer formed by a chemical vapor depositionmethod using an organic silane gas is preferable. As an organic silanegas, a silicon-containing compound such as tetraethoxysilane,tetramethylsilane, tetramethylcyclotetrasiloxane,octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane ortrisdimethylaminosilane can be used. A thermal oxide layer formed bysubjecting the single-crystal semiconductor substrate to heat treatmentat high temperature or chemical oxide can also be used for the bondinglayer 104. For example, chemical oxide can be formed by treating asurface of the single-crystal semiconductor substrate which is to be theSOI layer with an ozone-containing aqueous solution. Chemical oxide isformed reflecting flatness of the surface of the single-crystalsemiconductor substrate, which is preferable.

The bonding layer 104 having a smooth surface which is activated isprovided at a thickness of 1 nm to 600 nm, preferably 5 nm to 500 nm,more preferably 5 nm to 200 nm. With such a thickness, it is possible tosmooth surface roughness of a surface on which a bond is to be formed (asurface that is to form a bond) and also to ensure smoothness of agrowing surface of the layer. In addition, providing the bonding layer104 makes it possible to mitigate thermal distortion of the basesubstrate and the SOI layer that are to be bonded together. In bondingthe SOI layer 102 to the base substrate 100 that is a flexible substratehaving an insulating surface, the base substrate 100 and the SOI layer102 can be strongly bonded together by provision of the bonding layer104 made of a silicon oxide layer, preferably a thermal oxide layer, asilicon oxide layer formed by treating a surface of the single-crystalsemiconductor substrate with ozone water, or a silicon oxide layerformed using organic silane as a material over one or both of bondingsurfaces of the base substrate 100 and the SOI layer 102.

FIG. 3A to FIG. 4B show a structure in which at least a barrier layer105 and the bonding layer 104 are provided between the base substrate100 and the SOI layer 102. When the SOI layer 102 is bonded to the basesubstrate 100, by provision of the barrier layer 105, the SOI layer 102can be prevented from being contaminated by impurities such as movableions of an alkaline metal, an alkaline earth metal, or the like that arediffused from a flexible insulating substrate, a flexible metalsubstrate and a flexible substrate having an insulating surface that areused as the base substrate 100. As the barrier layer 105, anitrogen-containing insulating layer is preferably used. Typically, thebarrier layer 105 is formed by stacking one or more of a silicon nitridelayer, a silicon nitride oxide layer, a silicon oxynitride layer, analuminum nitride layer, an aluminum nitride oxide layer, or an aluminumoxynitride layer. A barrier layer 120 can be formed, for example, bystacking a silicon oxynitride layer and a silicon nitride oxide layerfrom the SOI layer 102 side. As the barrier layer 105, a dense layer ofwhich etching rate is low is used, whereby a barrier function of thebarrier layer 105 can be improved. As the dense layer of which etchingrate is low, the nitrogen-containing insulating layer, the silicon oxidelayer, the silicon oxynitride layer, the silicon nitride oxide layer,the aluminum nitride layer, or the like can be formed.

Note that a silicon oxynitride layer means a layer that contains moreoxygen than nitrogen and, in the case where measurements are performedusing Rutherford backscattering spectrometry (RBS) and hydrogen forwardscattering (HFS), includes oxygen, nitrogen, silicon, and hydrogen atconcentrations ranging from 50 at. % to 70 at. %, 0.5 at. % to 15 at. %,25 at. % to 35 at. %, and 0.1 at. % to 10 at. %, respectively. Further,a silicon nitride oxide layer means a layer that contains more nitrogenthan oxygen and, in the case where measurements are performed using RBSand HFS, includes oxygen, nitrogen, silicon, and hydrogen atconcentrations ranging from 5 at. % to 30 at. %, 20 at. % to 55 at. %,25 at. % to 35 at. %, and 10 at. % to 30 at. %, respectively. Note thatpercentages of nitrogen, oxygen, silicon, and hydrogen fall within theranges given above, where the total number of atoms contained in thesilicon oxynitride layer or the silicon nitride oxide layer is definedas 100 at. %.

FIG. 3A shows another structure of an SOI substrate according to thepresent invention. FIG. 3A shows a structure in which the barrier layer105 is provided between the bonding layer 104 and the base substrate100. Here, the barrier layer 105 is formed on the base substrate 100,the bonding layer 104 is formed on a surface of the SOI layer 102, andthe barrier layer 105 and the bonding layer 104 are bonded to eachother. Alternatively, a structure can be employed in which the bondinglayer 104 is formed on the base substrate 100, the barrier layer 105 isformed on the surface of the SOI layer 102, and the barrier layer 105and the bonding layer 104 are bonded to each other. Furthermore, astructure can also be employed in which the barrier layer 105 and thebonding layer 104 are sequentially stacked on one of surfaces of thebase substrate 100 or the SOI layer 102 and the bonding layer 104 isbonded to the other of the surfaces of the base substrate 100 and theSOI layer 102.

FIG. 3B shows a structure in which the bonding layer 104 and a pluralityof barrier layers 105 and 120 are provided between the base substrate100 and the SOI layer 102. Here, a barrier layer 105 is formed on thebase substrate 100, the barrier layer 120 and the bonding layer 104 aresequentially stacked on the surface of the SOI layer 102, and thebarrier layer 105 and the bonding layer 104 are bonded to each other.Alternatively, a structure can also be employed in which the barrierlayer 105 and the bonding layer 104 are sequentially stacked over thebase substrate 100, the barrier layer 120 is provided on the surface ofthe SOI layer 102, and the barrier layer 120 and the bonding layer 104are bonded to each other.

FIGS. 4A and 4B show a structure in which at least an insulating layer121 is provided between the base substrate 100 and the SOI layer 102 inaddition to the barrier layer 105 and the bonding layer 104. Theinsulating layer 121 can be provided between the SOI layer 102 and thebonding layer 104, between the bonding layer 104 and the barrier layer105, and between the base substrate 100 and the barrier layer 105.

FIG. 4A shows a structure in which the bonding layer 104, the barrierlayer 105 and the insulating layer 121 are provided between the basesubstrate 100 and the SOI layer 102. Here, the barrier layer 105 isprovided on the base substrate 100, the insulating layer 121 and thebonding layer 104 are sequentially stacked over the surface of the SOIlayer 102, and the barrier layer 105 and the bonding layer 104 arebonded to each other. Alternatively, a structure can also be employed inwhich the barrier layer 105 and the bonding layer 104 are sequentiallystacked over the base substrate 100, the insulating layer 121 isprovided on the surface of the SOI layer 102, and the bonding layer 104and the insulating layer 121 are bonded to each other.

FIG. 4B shows a structure in which the barrier layer 120 is provided forthe SOI layer 102 in addition to the barrier layer 105 over the surfaceof the base substrate 100. Here, the barrier layer 105 is formed on thebase substrate 100, the insulating layer 121, the barrier layer 120, andthe bonding layer 104 are sequentially stacked over the surface of theSOI layer 102, and the barrier layer 105 and the bonding layer 104 arebonded to each other. Alternatively, a structure can also be employed inwhich the barrier layer 105 and the bonding layer 104 are sequentiallystacked over the base substrate 100, the insulating layer 121 and thebarrier layer 120 are sequentially stacked over the surface of the SOIlayer 102, and the bonding layer 104 and the barrier layer 120 arebonded to each other.

The insulating layer 121 is preferably a thermal oxide layer formed bysubjecting the single-crystal semiconductor substrate tohigh-temperature heat treatment. Further, a silicon oxide layerdeposited by a chemical vapor deposition method using an organic silanegas similarly to the bonding layer 104 may be used. As the insulatinglayer 121, chemical oxide can also be used. A chemical oxide can beformed by, for example, treatment of a surface of a single-crystalsemiconductor substrate that is to become an SOI layer withozone-containing water. Because a chemical oxide reflects the shape ofthe surface of a single-crystal semiconductor substrate, it ispreferable that the single-crystal semiconductor substrate be flat sothat the chemical oxide also becomes flat.

The SOI substrate described in this embodiment mode is formed by bondingthe SOI layer to the flexible substrate; therefore, the SOI substratedescribed in this embodiment mode is flexible and thin.

Embodiment Mode 2

A method for manufacturing the SOI substrate described in EmbodimentMode 1 will be described with reference to FIG. 5A to FIG. 8D.

A single-crystal semiconductor substrate 101 shown in FIG. 5A iscleaned. The single-crystal semiconductor substrate 101 is irradiatedwith ions accelerated by an electric field from a surface thereof, andelements of the ions are contained at a predetermined depth of thesingle-crystal semiconductor substrate to form an ion-doped layer.Specifically, the ion-doped layer is a fragile layer containing theelements of the accelerated ions such as a region containing hydrogen,helium or halogen typified by fluorine. Hereinafter, the ion-doped layeris referred to as a fragile region 103. Irradiation with the acceleratedions is performed in consideration of a thickness of an SOI layer whichis to be transferred to a base substrate. The thickness of the SOI layeris set to be 5 nm to 500 nm, preferably 10 nm to 200 nm, more preferably10 nm to 100 nm, and much more preferably, 10 nm to 50 nm. Anaccelerating voltage when the single-crystal semiconductor substrate 101is irradiated with the ions is set in consideration of such a thickness.Note that, since a surface of the SOI layer is planarized by polishingor melting after separation, the thickness of the SOI layer right afterseparation is preferably set to be 50 nm to 500 nm.

The fragile region 103 is formed by irradiating the single-crystalsemiconductor substrate with accelerated ions which are generated byplasma excitation using a gas of hydrogen, helium, or a halogen typifiedby fluorine as a source gas. In this case, it is preferable to performirradiation with a plurality of ions of a single atom that has differentmasses or a plurality of ions of a plurality of atoms that has differentmasses. As a method of irradiation with such ions, an ion doping method,an ion implantation method, or the like can be given. In the case ofirradiating the single-crystal semiconductor substrate with theaccelerated hydrogen ions, the hydrogen ions preferably include H⁺, H₂⁺, and H₃ ⁺ ions with a high proportion of H₃ ⁺ ions. With a highproportion of H₃ ⁺ ions, the introduction efficiency can be increasedand irradiation time can be shortened. By thus performing ionirradiation where the proportion of H₃ ⁺ ions is higher than that of H⁺ions or H₂ ⁺ ions, the single-crystal semiconductor substrate 101contains a large number of hydrogen ions compared to a case ofperforming irradiation with the ions where the proportion of H₃ ⁺ ionsis not high, separation which is to be conducted later at the fragileregion 103 can be easily performed by irradiation with a small amount ofions.

When the single-crystal semiconductor substrate 101 is irradiated withthe accelerated ions, a surface of the single-crystal semiconductorsubstrate needs to be irradiated with the ions at high concentration.Therefore, the surface of the single-crystal semiconductor substrate 101becomes rough in some cases. Therefore, a protective layer for thesingle-crystal semiconductor substrate 101 using a silicon oxide layer,a silicon nitride layer, a silicon nitride oxide layer, or the like isprovided to have a thickness of 50 nm to 200 nm on the surface which isirradiated with the accelerated ions, whereby the surface which isirradiated with the ions can be prevented from being damaged and fromlosing its flatness, which is preferable.

Note that an ion doping method in this specification refers to a methodby which an object is irradiated with an ionized gas that is generatedfrom a source gas and accelerated by an electric field without massseparation and an element of the ionized gas is included in the object.When an ion doping apparatus is used, ion doping can be performed at ahigh dose with high efficiency even if a large substrate is used.

The accelerating voltage for ion doping may be set to be greater than orequal to 20 kV and less than or equal to 100 kV, preferably, greaterthan or equal to 20 kV and less than or equal to 70 kV, and the dose maybe set to be greater than or equal to 1×10¹⁶ ions/cm² and less than orequal to 4×10¹⁶ ions/cm², preferably, greater than or equal to 1×10¹⁶ions/cm² and less than or equal to 2.5×10¹⁶ ions/cm². In this embodimentmode, ion doping is performed with an accelerating voltage of 80 kV anda dose of 2×10¹⁶ ions/cm².

Next, as shown in FIG. 5B, a pressure member 122 is provided on thesurface of the single-crystal semiconductor substrate 101, and thesingle-crystal semiconductor substrate 101 and the pressure member 122are disposed to contact with each other and heated. That is, heattreatment and pressure treatment are performed, whereby thesingle-crystal semiconductor substrate 101 can be easily separated fromthe base substrate 100 using the fragile region 103 as a cleavage planein a later process. Note that the cleaved surface indicates a regionwhere the single-crystal semiconductor substrate is separated, andhereinafter the cleaved surface is referred to as a separation region. Atemperature of heat treatment is less than a temperature at which thefragile region 103 is separated and is preferably a temperature at whichthe fragile region 103 is fragile. For example, heat treatment isperformed at temperatures of greater than or equal to 250° C.,preferably greater than or equal to 300° C. and less than 400° C., morepreferably less than 350° C., whereby a change in the volume of finevoids formed in the fragile region 103 occurs. However, since thepressure member 122 is provided on the surface of the single-crystalsemiconductor substrate, flatness of the surface of the single-crystalsemiconductor substrate can be kept. As a result, distortion occurs inthe fragile region 103 due to a change in the volume of the fine voidsformed in the fragile region 103, so that the fragile region 103 can bemade to be more fragile along the fragile region. The pressure treatmentis performed so that a pressure is applied perpendicular to a bondingsurface in consideration of the pressure resistance of the basesubstrate 100 and the single-crystal semiconductor substrate 101.

FIG. 5C shows a mode where the base substrate 100 is disposed in contactwith the single-crystal semiconductor substrate 101 and the bothsubstrates are bonded to each other. A surface that is to form bond iscleaned sufficiently. Then, the base substrate 100 and thesingle-crystal semiconductor substrate 101 are disposed in contact witheach other with a pressure applied, so that the base substrate 100 andthe single-crystal semiconductor substrate 101 are bonded to each other.The bond is formed by Van der Waals forces. The base substrate 100 andthe single-crystal semiconductor substrate 101 are disposed in contactwith each other with a pressure applied, whereby a stronger bond thanthe bond by Van der Waals forces can be formed by hydrogen bonding.

In order to form a favorable bond, the surface that is to form a bond ispreferably activated. For example, the surface that is to form a bond isirradiated with an atomic beam or an ion beam. When an atomic beam or anion beam is used, an inert gas neutral atomic beam or inert gas ion beamof argon or the like can be used. Alternatively, plasma irradiation orradical treatment is performed. Further, at least one of bondingsurfaces of a flexible substrate having an insulating surface and asingle-crystal semiconductor layer may be subjected to treatment byoxygen plasma or washing with ozone water to be hydrophilic. Suchsurface treatment makes it possible to easily increase bonding strengthbetween different kinds of materials even if a later heat treatment isperformed at temperatures of greater than or equal to 250° C. and lessthan 400° C.

Note that, instead of heat treatment which is performed before bondingthe single-crystal semiconductor substrate 101 to the base substrate100, the single-crystal semiconductor substrate 101 may be irradiatedwith a laser beam from the side of the base substrate 100 or thesingle-crystal semiconductor substrate 101 after bonding thesingle-crystal semiconductor substrate 101 to the base substrate 100, sothat the fragile region 103 may be heated. Note that when irradiationwith a laser beam is performed from the single-crystal semiconductorsubstrate 101 side, a laser beam of infrared light is used. As a result,the fragile region is formed and the single-crystal semiconductorsubstrate 101 can be separated from the base substrate 100 using thefragile region as a separation region.

As shown in FIG. 5D, after bonding the single-crystal semiconductorsubstrate 101 to the base substrate 100, the single-crystalsemiconductor substrate 101 is separated from the base substrate 100using the fragile region 103 as a separation region, thereby obtainingan SOI substrate. Since the surface of the single-crystal semiconductorsubstrate 101 is bonded to the base substrate 100, an SOI layer 102having the same crystallinity as the single-crystal semiconductorsubstrate 101 is left remaining on the base substrate 100.

Before the single-crystal semiconductor substrate 101 is separated fromthe base substrate 100 using the fragile region 103 as a separationregion, a trigger is preferably made so that separation can be conductedeasily. Specifically, pretreatment is performed by which adhesionbetween the fragile region 103 and the SOI layer 102 is as selected(partially) lowered, whereby separation defects are reduced and a yieldis improved. Typically, an example can be given in which a groove isformed in the fragile region 103 by a laser beam or a dicer from theside of the base substrate 100 or the single-crystal semiconductorsubstrate 101.

When the single-crystal semiconductor substrate 101 is separated fromthe base substrate 100, an adhesive sheet which can be separated bylight or heat is provided on at least one of the surfaces of the basesubstrate 100 and the single-crystal semiconductor substrate 101, one ofthe base substrate 100 and the single-crystal semiconductor substrate101 is fixed, and the other is separated, so that separation can beconducted easily. At this time, by provision of a supporting member forthe other of the base substrate 100 and the single-crystal semiconductorsubstrate 101 which is not fixed, a separation process can be conductedeasily.

Note that the SOI layer obtained by separation is preferably subjectedto CMP (chemical mechanical polishing) so that a surface of the SOIlayer is planarized. Further, the surface of the SOI layer may beplanarized by irradiating the surface with a laser beam without using aphysical polishing method such as CMP. Note that laser beam irradiationis preferably performed in a nitrogen atmosphere at an oxygenconcentration of less than or equal to 10 ppm. This is because there isa possibility that the surface of the SOI layer becomes rough whenirradiation with a laser beam is performed in an oxygen atmosphere. CMPor the like may be performed in order that the SOI layer obtained isthinned.

Further, before provision of the pressure member 122 on the surface ofthe single-crystal semiconductor substrate 101 shown in FIG. 5B, abonding layer 104 may be formed on the surface of the single-crystalsemiconductor substrate 101. Alternatively, the pressure member 122 isprovided on the surface of the single-crystal semiconductor substrate101 shown in FIG. 5B, the single-crystal semiconductor substrate 101 andthe pressure member 122 are disposed in contact with each other andheated, and then the bonding layer 104 may be formed on the surface ofthe single-crystal semiconductor substrate 101. After that, asillustrated in FIG. 5C, the bonding layer 104 and the base substrate 100are disposed in contact with each other, whereby the both can be easilybonded to each other.

According to this embodiment mode, a flexible substrate with low heatresistance and the single-crystal semiconductor substrate can be bondedto each other, thereby manufacturing the SOI substrate. With thisstructure, even if a substrate of which heatresistant temperature is lowsuch as a plastic substrate is used, the SOI substrate having the SOIlayer which is bonded to the substrate by the bonding portions with highbonding strength can be obtained with high yield. Further, the SOIsubstrate which is flexible and thin can be manufactured.

Embodiment Mode 3

Next, a method for manufacturing a SOI substrate which is different fromthat described in the above embodiment mode will be described withreference to FIGS. 6A to 6D. In FIGS. 6A to 6D, a mode is described inwhich a base substrate 100 and a single-crystal semiconductor substrate101 are bonded to each other using a bonding layer. In addition, a modeis described in which the base substrate 100 and the single-crystalsemiconductor substrate 101 are bonded to each other without using apressure member.

Similarly to FIG. 5A, as shown in FIG. 6A, the single-crystalsemiconductor substrate 101 which is cleaned is irradiated with ionsaccelerated by an electric field from a surface thereof, and elements ofthe ions are contained at a predetermined depth of the single-crystalsemiconductor substrate to form a fragile region 103.

Next, as shown in FIG. 6B, at least a cap layer 123 and a bonding layer104 are formed over the single-crystal semiconductor substrate 101.Here, the cap layer 123 is formed on the surface of the single-crystalsemiconductor substrate 101 and the bonding layer 104 is formed on thecap layer 123.

Here, the thickness of at least one of the bonding layer 104 and the caplayer 123 is preferably thick. Although a change in the volume of thefine voids formed in the fragile region 103 occurs by heat treatment ina later process, the cap layer 123 is provided on the surface of thesingle-crystal semiconductor substrate, so that flatness of the surfaceof the single-crystal semiconductor substrate can be kept. Accordingly,flatness of the bonding layer 104 provided on the cap layer 123 can alsobe kept. As a result, distortion occurs in the fragile region 103 due tothe change in the volume of fine voids formed in the fragile region 103,so that the fragile region 103 can be made to be more fragile along thefragile region. In particular, when the thickness of the cap layer 123is made to be large, a pressure is applied perpendicular to the surfaceof the single-crystal semiconductor substrate 101 in heat treatment, sothat flatness of the surface of the single-crystal semiconductorsubstrate to which ions are irradiated can be kept and the fragileregion can be formed.

The cap layer 123 can be formed using a single layer or a stacked layerof a nitrogen-containing insulating layer and/or a silicon oxide layer.Note that, when a part or a whole of the cap layer 123 is formed usingthe nitrogen-containing insulating layer, the cap layer 123 alsofunctions as a barrier layer, which is preferable.

Next, heating is performed and a change in the volume of the fine voidsformed in the fragile region 103 occurs. As a result, the single-crystalsemiconductor substrate 101 can be easily separated from the basesubstrate 100 using the fragile region as a separation region in a laterprocess. The temperature of heat treatment is preferably less than atemperature at which separation occurs at the fragile region 103 andgreater than or equal to a temperature at which the fragile region 103is formed. For example, heat treatment is performed at temperatures ofgreater than or equal to 250° C., preferably greater than or equal to300° C. and less than 400° C., more preferably less than 350° C.

In FIG. 6C, the single-crystal semiconductor substrate 101 is providedwith the cap layer 123 and the bonding layer 104. FIG. 6C shows aprocess in which the bonding layer 104 and the base substrate 100 aredisposed in contact with each other and bonded to each other. Thebonding layer 104 provided for the single-crystal semiconductorsubstrate 101 and the base substrate 100 are bonded to each other bybeing disposed in contact with each other.

In order to form a favorable bond, at least one of the surfaces of thebonding layer 104 and the base substrate 100 may be activated. Forexample, the surface that is to form a bond is irradiated with an atomicbeam or an ion beam. When an atomic beam or an ion beam is used, aninert gas neutral atomic beam or inert gas ion beam of argon or the likecan be used. Alternatively, plasma irradiation or radical treatment isperformed. Further, at least one of the bonding surfaces of the basesubstrate 100 and the bonding layer 104 may be subjected to treatment byoxygen plasma or washing with ozone water to be hydrophilic. Such asurface treatment makes it possible to easily perform bonding betweendifferent kinds of materials even if heat treatment is performed attemperature of less than 400° C.

After that, the SOI substrate can be obtained by separation of thesingle-crystal semiconductor substrate 101 as shown in FIG. 6D. Notethat the surface of the SOI layer obtained by separation is preferablyplanarized. Further, CMP or the like may be performed in order that theSOI layer obtained is thinned. Before the single-crystal semiconductorsubstrate 101 is separated from the base substrate 100 using the fragileregion 103 as a separation region, a trigger may be made so thatseparation can be conducted easily. When the single-crystalsemiconductor substrate 101 is separated from the base substrate 100, anadhesive sheet which can be separated by light or heat is provided on atleast one of the surfaces of the base substrate 100 and thesingle-crystal semiconductor substrate 101, one of the base substrate100 and the single-crystal semiconductor substrate 101 is fixed, and theother is separated, so that separation can be conducted more easily. Atthis time, by provision of a supporting member for the other of the basesubstrate 100 and the single-crystal semiconductor substrate 101 whichis not fixed, a separation process can be conducted easily.

Note that, instead of heat treatment which is performed before bondingthe single-crystal semiconductor substrate 101 to the base substrate100, the single-crystal semiconductor substrate may be irradiated with alaser beam from the base substrate 100 side or the single-crystalsemiconductor substrate 101 side after bonding the single-crystalsemiconductor substrate 101 to the base substrate 100, and the fragileregion 103 may be heated. Note that when irradiation with a laser beamis performed from the single-crystal semiconductor substrate 101 side, alaser beam with a wavelength which the single-crystal semiconductorsubstrate absorbs, typically, infrared light is used. As a result, thesingle-crystal semiconductor substrate 101 can be separated from thebase substrate 100 using the fragile region as a separation region.

According to this embodiment mode, a flexible substrate with low heatresistance and the single-crystal semiconductor substrate can be bondedto each other, thereby manufacturing the SOI substrate. With thisstructure, even if a substrate of which heatresistant temperature is lowsuch as a plastic substrate is used, the SOI substrate having the SOIlayer which is bonded to the substrate by the bonding portions with highbonding strength can be obtained with high yield. Further, the SOIsubstrate which is flexible and thin can be manufactured.

Embodiment Mode 4

Next, a method for manufacturing an SOI substrate which is differentfrom that described in the above embodiment modes will be described withreference to FIGS. 7A to 7D. Here, a separation layer is formed on asupporting substrate, and an SOI layer is formed on the separationlayer. After a base substrate is bonded to the SOI layer, the basesubstrate is separated from the supporting substrate. Thus, the SOIsubstrate is manufactured.

As shown in FIG. 7A, a separation layer 131 is formed on a supportingsubstrate 130, and an insulating layer 132 is formed on the separationlayer 131. Here, the supporting substrate 130 is a substrate for formingthe separation layer. As the supporting substrate 130, a substratehaving heat resistance which can withstand a heat treatment temperatureat which a crack is generated in a fragile region (typically, 400° C. to600° C.) is preferably used. Typically, a glass substrate, a quartzsubstrate, a ceramic substrate, a metal substrate, a silicon wafer, orthe like can be used.

The separation layer 131 is formed using a single layer or a stackedlayer formed of an element selected from tungsten, molybdenum, titanium,tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium,palladium, osmium, iridium, or silicon, or an alloy material or acompound material containing the above-described element as its maincomponent by a sputtering method, a plasma CVD method, a coating method,a printing method, or the like. When a layer containing silicon isformed as the separation layer 131, a crystal structure of the layercontaining silicon may be any of an amorphous structure, amicrocrystalline structure, and a polycrystalline structure. Here, acoating method is a method in which a solution is discharged over anobject to be processed to form the separation layer such as a spincoating method or a droplet discharging method. A droplet dischargingmethod is a method in which droplets of a composition that contains fineparticles are discharged through a minute hole and formed into a patternwith a predetermined shape.

When the separation layer 131 has a single layer structure, a layercontaining tungsten, molybdenum, or a mixture of tungsten and molybdenumis preferably formed. Alternatively, a layer containing any one offollowing is formed: tungsten oxide, tungsten oxynitride, molybdenumoxide, molybdenum oxynitride, an oxide of a mixture of tungsten andmolybdenum or an oxynitride of a mixture of tungsten and molybdenum isformed. Note that the mixture of tungsten and molybdenum corresponds to,for example, an alloy of tungsten and molybdenum.

When the separation layer 131 has a stacked layer structure, a metallayer is preferably formed as a first layer and a metal oxide layer ispreferably formed as a second layer. Typically, a layer containingtungsten, molybdenum or a mixture of tungsten and molybdenum is formedas a first layer, and a layer containing any of the following is formedas a second layer: an oxide of tungsten, molybdenum, or a mixture oftungsten and molybdenum; a nitride of tungsten, molybdenum, or a mixtureof tungsten and molybdenum; an oxynitride of tungsten, molybdenum, or amixture of tungsten and molybdenum; and a nitride oxide of tungsten,molybdenum, or a mixture of tungsten and molybdenum.

When the separation layer 131 has a stacked layer structure in which ametal layer is formed as the first layer and a metal oxide layer isformed as the second layer, the stacked layer structure may be formed byutilizing the following: for example, a layer containing tungsten isformed as the metal layer, and for example, a silicon oxide layer isformed thereover as the insulating layer 132 formed of an oxide, wherebya layer containing an oxide of tungsten is formed as the metal oxidelayer in an interface between the layer containing tungsten and theinsulating layer. Moreover, the metal oxide layer may be formed in sucha manner that the surface of the metal layer is subjected to thermaloxidation treatment, oxygen plasma treatment, treatment using a solutionhaving strong oxidizability such as ozone water, or the like.

Further, as the separation layer 131, a metal layer may be formed as thefirst layer, and a metal nitride layer or a metal oxynitride layer maybe formed as the second layer. Typically, after formation of a layercontaining tungsten as the first layer, a tungsten nitride layer or atungsten oxynitride layer may be formed as the second layer.

The insulating layer 132 is formed using a single layer or multilayerstructure with the use of an inorganic compound by a sputtering method,a plasma CVD method, a coating method, a printing method, or the like.As a typical example of the inorganic compound, silicon oxide, siliconnitride, silicon oxynitride, silicon nitride oxide, or the like can begiven. Note that silicon nitride, silicon nitride oxide, siliconoxynitride, or the like is used for the insulating layer 132 whichfunctions as a base layer, whereby entry of moisture or a gas such asoxygen or the like from outside to an element layer which is to beformed later can be prevented.

Further, the insulating layer 132 may have a stacked layer structure.For example, the insulating layer 132 may be formed by stacking layersof an inorganic compound. Typically, the insulating layer 132 may beformed by stacking two or more layers of silicon oxide, silicon nitrideoxide, silicon nitride, and silicon oxynitride.

Next, the single-crystal semiconductor substrate 101 having the fragileregion 103 which is made to be fragile by a process described inEmbodiment Mode 2 or 3 and the insulating layer 132 are bonded to eachother by being disposed in contact with each other.

In order to form a favorable bond, at least one of the surfaces of theinsulating layer 132 and the single-crystal semiconductor substrate 101may be activated. For example, the surface that is to form a bond isirradiated with an atomic beam or an ion beam. When an atomic beam or anion beam is used, an inert gas neutral atomic beam or inert gas ion beamof argon or the like can be used. Alternatively, plasma irradiation orradical treatment is performed. Further, at least one of the bondingsurfaces of the insulating layer 132 and the single-crystalsemiconductor substrate 101 may be subjected to treatment by oxygenplasma or washing with ozone water to be hydrophilic. Such a surfacetreatment makes it possible to easily perform bonding between differentkinds of materials even if temperatures of a heat treatment step isgreater than or equal to 250° C. and less than 400° C.

As shown in FIG. 7B, the single-crystal semiconductor substrate 101 isseparated from the supporting substrate 130 using the fragile region 103as a separation region by heat treatment and pressure treatment. Theheat treatment is preferably performed at a temperature equal to orlower than the heat resistant temperature of the supporting substrate130. For example, heat treatment is performed at 400° C. to 600° C.,whereby a change in the volume of the fine voids formed in the fragileregion 103 occurs, the single-crystal semiconductor substrate 101 can beseparated from the supporting substrate 130 along the fragile region103.

At this time, instead of heat treatment, the single-crystalsemiconductor substrate 101 is irradiated with a laser beam so that achange in the volume of the fine voids formed in the fragile region 103may occur. A laser beam which is transmitted through the single-crystalsemiconductor substrate and has a wavelength absorbed by the elementcontained in the fragile region 103 is preferably used. Typically,infrared light can be used.

After separation of the single-crystal semiconductor substrate, asurface of the SOI layer is preferably planarized. Further, CMP or thelike may be performed in order that the SOI layer obtained is thinned.Before the single-crystal semiconductor substrate 101 is separated fromthe supporting substrate 130 using the fragile region 103 as aseparation region, a trigger may be made so that separation can beconducted easily. When the single-crystal semiconductor substrate 101 isseparated from the supporting substrate 130, an adhesive sheet which canbe separated by light or heat is provided on at least one of thesurfaces of the supporting substrate 130 and the single-crystalsemiconductor substrate 101, one of the supporting substrate 130 and thesingle-crystal semiconductor substrate 101 is fixed, and the other isseparated, so that separation can be conducted more easily. At thistime, by provision of a supporting member for the other of thesupporting substrate 130 and the single-crystal semiconductor substrate101 which is not fixed, a separation process can be conducted easily.

Next, as shown in FIG. 7C, by thermal pressure bonding of the basesubstrate 100 and the SOI layer 102, bonding, the base substrate 100 canbe attached firmly to the SOI layer 102. Alternatively, the basesubstrate 100 can be attached firmly to the SOI layer 102 using anadhesive (not shown). As described in Embodiment Mode 2, the SOI layer102 and the base substrate 100 may be bonded to each other by beingdisposed in contact with each other.

Next, as shown in FIG. 7D, the base substrate 100 to which the SOI layeris attached firmly is separated from the supporting substrate 130 by aphysical method. A physical method refers to a dynamic method or amechanical method which changes some kind of dynamic energy ormechanical energy. A typical physical method refers to the applicationof mechanical power, for example, pulling by a human hand or a grippingtool, or separating while rolling a roller. At this time, if an adhesivesheet which can be separated by light or heat is provided on at leastone of the surfaces of the base substrate 100 and the supportingsubstrate 130, separation can be conducted more easily.

A liquid penetrates into an interface of the separation layer 131 andthe insulating layer 132, and then the base substrate 100 may beseparated from the supporting substrate 130.

Here, separation is caused at any of the interface of the separationlayer 131 and the insulating layer 132, the separation layer 131 and aninterface of the supporting substrate 130 and the separation layer 131,so that an element layer can be separated from the supporting substrate130.

Note that, before the separation process, a trigger may be made for theseparation layer 131 so that separation can be conducted easily. Whenthe single-crystal semiconductor substrate 101 is separated from thesupporting substrate 130, an adhesive sheet which can be separated bylight or heat is provided on at least one of the surfaces of thesupporting substrate 130 and the single-crystal semiconductor substrate101, one of the base substrate 100 and the supporting substrate 130 isfixed, and the other is separated, so that separation can be conductedmore easily. At this time, by provision of a supporting member for theother of the supporting substrate 130 and the single-crystalsemiconductor substrate 101 which is not fixed, a separation process canbe conducted easily.

After that, the insulating layer 132 which is bonded to the surface ofthe SOI layer 102 may be removed. Through the above process, the SOIsubstrate can be manufactured. According to this embodiment mode, thesingle-crystal semiconductor substrate in which the fragile region isformed is heated, the SOI layer is separated, and then the basesubstrate is attached firmly to the SOI layer. After the SOI layer isonce held over the supporting substrate which can be handled easily, thebase substrate is attached firmly to the SOI layer and the SOI layer isseparated from the supporting substrate. Accordingly, the SOI substratein which the SOI layer is provided on the base substrate with low heatresistance can be manufactured with high yield.

According to this embodiment mode, the flexible substrate with low heatresistance and the single-crystal semiconductor substrate are bonded toeach other, so that the SOI substrate can be manufactured. With thisstructure, even if a substrate of which heat resistant temperature islow such as a plastic substrate is used, the SOI substrate having theSOI layer which is bonded to the substrate by the bonding portions withhigh bonding strength can be obtained with high yield. Since thesupporting substrate is handled more easily than the flexible substrate,the supporting substrate is handled easily in the manufacturing process,so that a yield can be improved. Further, the SOI substrate which isflexible and thin can be manufactured.

Embodiment Mode 5

Next, a method for manufacturing an SOI substrate which is differentfrom those described in the above embodiment modes will be describedwith reference to FIGS. 8A to 8D. Here, the SOI substrate ismanufactured using a base substrate 100 of which heat resistanttemperature is less than or equal to 700° C.

Similarly to FIG. 5A, as shown in FIG. 8A, a single-crystalsemiconductor substrate 101 which is cleaned is irradiated with ionsaccelerated by an electric filed, the ions are contained at apredetermined depth of the single-crystal semiconductor substrate toform a fragile region 103.

Next, as shown in FIG. 8B, at least a bonding layer 104 is formed overthe single-crystal semiconductor substrate 101. Here, a barrier layer105 is formed on a surface of the single-crystal semiconductor substrate101 and the bonding layer 104 is formed on the barrier layer 105.

The barrier layer 105 preferably includes at least a nitrogen-containinginsulating layer. The nitrogen-containing insulating layer is formed bystacking a single layer or a plurality of layers selected from,typically, a silicon nitride layer, a silicon nitride oxide layer, asilicon oxynitride layer, an aluminum nitride layer, an aluminum nitrideoxide layer, or an aluminum oxynitride layer. The barrier layer 105 canbe formed, for example, by stacking a silicon oxynitride layer and asilicon nitride oxide layer from the single-crystal semiconductorsubstrate 101 side. The barrier layer 105 can be formed by a plasma CVDmethod, a sputtering method, or the like.

FIG. 8C shows a process in which the bonding layer 104 formed over thesingle-crystal semiconductor substrate 101 and the base substrate 100are bonded to each other by being disposed in contact with each other.The bonding layer 104 provided for the single-crystal semiconductorsubstrate 101 and the base substrate 100 are bonded to each other bybeing disposed in contact with each other. Here, the heat resistanttemperature of the base substrate 100 is preferably less than or equalto 700° C. Typically, a flexible glass substrate, a flexible metal filmwhich has an insulating layer or the like can be used. When the basesubstrate 100 has such heat resistance, heat treatment by whichseparation can be conducted along the fragile region 103 can beperformed.

In order to form a favorable bond, at least one of the surfaces of thebase substrate 100 and the bonding layer 104 may be activated. Forexample, the surface that is to form a bond is irradiated with an atomicbeam or an ion beam. When an atomic beam or an ion beam is used, aninert gas neutral atomic beam or inert gas ion beam of argon or the likecan be used. Alternatively, plasma irradiation or radical treatment isperformed. Further, at least one of the bonding surfaces of the flexiblesubstrate having an insulating surface and the single-crystalsemiconductor substrate may be subjected to a treatment by oxygen plasmaor washing with ozone water to be hydrophilic. Such a surface treatmentmakes it possible to easily perform bonding between different kinds ofmaterials even if temperatures of a heat treatment step is greater thanor equal to 250° C. and less than 400° C.

After that, heat treatment and a pressure treatment are performed, sothat the single-crystal semiconductor substrate 101 can be separatedfrom the base substrate 100 using the fragile region 103 as a separationregion as shown in FIG. 8D. The heat treatment is preferably performedat a temperature equal to or lower than the heat resistant temperatureof the base substrate 100. For example, heat treatment is performed at400° C. to 600° C., whereby a change in the volume of the fine voidsformed in the fragile region 103 occurs, and the single-crystalsemiconductor substrate 101 can be separated from the base substrate 100along the fragile region 103. The pressure treatment is performed sothat a pressure is applied perpendicular to a bonding surface inconsideration of pressure resistance of the base substrate 100 and thesingle-crystal semiconductor substrate 101.

At this time, instead of heat treatment, the single-crystalsemiconductor substrate 101 is irradiated with a laser beam and a changein the volume of the fine voids formed in the fragile region 103 mayoccur. A laser beam which is transmitted through the single-crystalsemiconductor substrate and has a wavelength absorbed by the elementcontained in the fragile region 103 is preferably used. Typically,infrared light can be used.

Instead of heat treatment, the single-crystal semiconductor substratemay be irradiated with a laser beam from the base substrate 100 sideafter bonding the single-crystal semiconductor substrate 101 to the basesubstrate 100, and the fragile region 103 may be heated. As a result,the single-crystal semiconductor substrate 101 can be separated from thebase substrate 100 using the fragile region as a separation region.

Note that the surface of the SOI layer obtained by separation ispreferably planarized. Further, CMP or the like may be performed inorder that the SOI layer obtained is thinned. Before the single-crystalsemiconductor substrate 101 is separated from the base substrate 100using the fragile region 103 as a separation region, a trigger may bemade so that separation can be conducted easily. When the single-crystalsemiconductor substrate 101 is separated from the base substrate 100, anadhesive sheet which can be separated by light or heat is provided on atleast one of the surfaces of the base substrate 100 and thesingle-crystal semiconductor substrate 101, one of the base substrate100 and the single-crystal semiconductor substrate 101 is fixed, and theother is separated, so that separation can be conducted more easily. Atthis time, by provision of a supporting member for the other of the basesubstrate 100 and the single-crystal semiconductor substrate 101 whichis not fixed, a separation process can be conducted easily.

In this manner, according to this embodiment mode, even if the basesubstrate 100 such as a glass substrate of which heat resistanttemperature is less than or equal to 700° C. is used, the SOI layer 102with high bonding strength with the bonding portion of the basesubstrate can be obtained. As the base substrate 100, any of a varietyof glass substrates that are used in the electronics industry and thatare referred to as non-alkali glass substrates, such as aluminosilicateglass substrates, aluminoborosilicate glass substrates, and bariumborosilicate glass substrates, can be used. In other words, asingle-crystal semiconductor layer can be formed over a substrate thatis longer than one meter on each side. With the use of such a large-areasubstrate, not only a display device such as a liquid crystal displaybut also a semiconductor integrated circuit can be manufactured.

In this embodiment mode, an integrated circuit is formed using thesingle-crystal semiconductor layer which is bonded to the flexiblesupporting substrate having an insulating surface, whereby asemiconductor device with increased processing speed and with low powerconsumption can be manufactured. Further, a semiconductor device whichis flexible and thin can be manufactured.

Embodiment Mode 6

Next, a semiconductor device using the SOI substrate described inEmbodiment Modes 1 to 5 will be described with reference to FIGS. 9A to9E and FIGS. 10A and 10B. Here, a mode in which a semiconductor deviceis manufactured using the SOI substrate where the single-crystalsemiconductor substrate and the base substrate are bonded to each otherusing a bonding layer 104 as shown in FIGS. 6A to 6D and 8A to 8D willbe described. The SOI substrate where the single-crystal semiconductorsubstrate and the base substrate are bonded to each other without usingthe bonding layer as shown in FIGS. 5A to 5D and 7A to 7D can also beused. A supporting substrate may be bonded to the base substrate of theSOI substrate. The SOI substrate is held by a holding member which holdsthe SOI substrate, whereby a semiconductor device can be manufacturedwith high yield even if a flexible substrate that is easily bent isused. As an example of the holding member, a roller, a gripper, or thelike can be given.

In FIG. 9A, an SOI layer 102 is provided over a base substrate 100 witha bonding layer 104 and a barrier layer 105 interposed therebetween.Over the SOI layer 102, a silicon nitride layer 124 and a silicon oxidelayer 125 are formed in a region corresponding to an element formationregion. The silicon oxide layer 125 is used as a hard mask when the SOIlayer 102 is etched for element isolation. The silicon nitride layer 124is used as an etching stopper.

The thickness of the SOI layer 102 ranges from 5 nm to 500 nm,preferably, 10 nm to 200 nm. The thickness of the SOI layer 102 can beset as appropriate by control of the depth of the fragile region 103that is shown in FIGS. 5A to SD. To the SOI layer 102, a p-type impuritysuch as boron, aluminum or gallium is added in order to controlthreshold voltage. For example, boron may be added as a p-type impurityat a concentration of greater than or equal to 5×10¹⁶ cm⁻³ and less thanor equal to 1×10¹⁸ cm⁻³.

FIG. 9B shows a step of etching the SOI layer 102 and the bonding layer104 with the silicon oxide layer 125 used as a mask. Next, exposed endsurfaces of the SOI layer 102 and the bonding layer 104 are nitrided byplasma treatment. By this nitridation treatment, a silicon nitride layer107 is formed in at least a peripheral end portion of the SOI layer 102.The silicon nitride layer 107 has an insulating property and has theeffect of preventing leak current from flowing along the end surface ofthe SOI layer 102. In addition, because of its resistance to oxidation,the silicon nitride layer 107 can prevent an oxide layer from growingfrom the end surface into a “bird's beak” between the SOI layer 102 andthe barrier layer 105.

FIG. 9C shows a step of deposition of an element isolation insulatinglayer 108. As the element isolation insulating layer 108, a siliconoxide film which is deposited by a chemical vapor deposition methodusing TEOS is used. The element isolation insulating layer 108 isdeposited thickly so that the SOI layer 102 is buried.

FIG. 9D shows a step of partially removing the element isolationinsulating layer 108 to expose the silicon nitride layers 124. Thisremoval step may be performed using dry etching or chemical mechanicalpolishing processing. The silicon nitride layer 124 functions as anetching stopper. The element isolation insulating layer 108 is leftremaining to fill in a gap between the SOI layers 102. The siliconnitride layer 124 is then removed.

In FIG. 9E, after the SOI layer 102 is exposed, a gate insulating layer109, a gate electrode 110, and a sidewall insulating layer 111 areformed, and a first impurity region 112 and a second impurity region 113are formed. An insulating layer 114 is formed using a silicon nitridelayer and used as a hard mask when the gate electrode 110 is etched.

In FIG. 10A, an interlayer insulating layer 115 is formed. As theinterlayer insulating layer 115, a borophosphosilicate glass (BPSG)layer is formed and then planarized by reflow. Alternatively, a siliconoxide layer may be formed using TEOS and then planarized by chemicalmechanical polishing processing. In the planarizing processing, theinsulating layer 114 over the gate electrode 110 functions as an etchingstopper. A contact hole 116 is formed in the interlayer insulating layer115. The contact hole 116 is formed into a self-aligned contactstructure using the sidewall insulating layer 111.

After that, as shown in FIG. 10B, a contact plug 117 is formed by a CVDmethod using tungsten hexafluoride. Furthermore, an insulating layer 118is formed; an opening is formed to match the contact plug 117; and awiring 119 is provided therein. The wiring 119 is formed of aluminum oran aluminum alloy and is provided with upper and lower metal layers ofmolybdenum, chromium, titanium, or the like as barrier metal layers.

Here, a stack which includes from the SOI layers 102 to the insulatinglayers 118 and the wirings 119 is referred to as an element layer 135.

After that, when a plurality of semiconductor devices is included in theelement layer 135, the element layer 135 and the base substrate 100 maybe divided and the plurality of semiconductor devices may be cut out. Bysuch a process, a plurality of semiconductor devices can bemanufactured.

In this manner, a semiconductor element, typically, a field effecttransistor can be manufactured using the SOI layer 102 that is bonded tothe base substrate 100. Because the SOI layer 102 according to thisembodiment mode is a single-crystal semiconductor with uniform crystalorientation, a uniform and high-performance field effect transistor canbe obtained. In other words, it is possible to suppress inhomogeneity ofvalues of important transistor characteristics, such as thresholdvoltage and mobility, and to achieve high performance such as highmobility. Further, since the barrier layer 105 is provided between thebase substrate 100 and the SOI layer 102, the SOI layer can be preventedfrom being contaminated by an impurity from the base substrate.Therefore, variation in characteristics of the transistors formed in theelement layer can be suppressed. Furthermore, a semiconductor devicewhich is flexible and thin can be manufactured.

Embodiment Mode 7

Next, a method for manufacturing a semiconductor device using an SOIsubstrate described in Embodiment Modes 1 to 5 will be described withreference to FIGS. 11A to 11D and FIGS. 12A and 12B. Here, a mode inwhich a semiconductor device is manufactured using the SOI substratewhere the single-crystal semiconductor substrate and the base substrateare bonded to each other using a bonding layer 104 as shown in FIGS. 6Ato 6D and FIGS. 8A to 8D will be described. The SOI substrate where thesingle-crystal semiconductor substrate and the base substrate are bondedto each other without the bonding layer as shown in FIGS. 5A to 5D andFIGS. 7A to 7D can also be used. A supporting substrate may be bonded tothe base substrate of the SOI substrate. The SOI substrate is held by aholding member which holds the SOI substrate, whereby a semiconductordevice can be manufactured with high yield even if a flexible substratethat is easily bent is used. As an example of the holding member, aroller, a gripper, or the like can be given.

Similarly to FIG. 6A, as shown in FIG. 11A, a surface of asingle-crystal semiconductor substrate 101 is irradiated with ionsaccelerated by an electric filed, the ions are contained at apredetermined depth of the single-crystal semiconductor substrate toform a fragile region 103. Next, a cap layer 123 and the bonding layer104 are sequentially stacked over the surface of the single-crystalsemiconductor substrate 101. After that, heating is performed and thefragile region 103 is made to be more fragile. Instead of the cap layer123, as described in Embodiment Mode 2, after provision of a pressuremember for the bonding layer 104, heating is performed and the fragileregion 103 is made to be more fragile.

FIG. 11B shows a mode in which an insulating layer 132 formed over asupporting substrate 130 and a surface of the bonding layer 104 providedfor the single-crystal semiconductor substrate 101 are bonded to eachother by being disposed in contact with each other.

A separation layer 131 is formed on the supporting substrate 130 and theinsulating layer 132 is formed on the separation layer 131. Next, theinsulating layer 132 formed over the supporting substrate 130 and thebonding layer 104 provided for the surface of the single-crystalsemiconductor substrate 101 are disposed in contact with each other andthe insulating layer 132 and the bonding layer 104 are bonded to eachother. The bond is formed by Van der Waals forces. By pressing thesupporting substrate 130 and the single-crystal semiconductor substrate101 against each other, a stronger bond can be formed by hydrogenbonding.

In order to form a favorable bond, at least one of the surfaces of theinsulating layer 132 and the bonding layer 104 may be activated. Forexample, the surface that is to form a bond is irradiated with an atomicbeam or an ion beam. When an atomic beam or an ion beam is used, aninert gas neutral atomic beam or inert gas ion beam of argon or the likecan be used. Alternatively, plasma irradiation or radical treatment isperformed. Such a surface treatment makes it possible to easily performbonding between different kinds of materials even if temperatures of aheat treatment step is greater than or equal to 250° C. and less than400° C.

In FIG. 11C, the single-crystal semiconductor substrate 101 is bonded tothe supporting substrate 130, and then the single-crystal semiconductorsubstrate 101 is subjected to heat treatment at 400° C. to 600° C. Acrack is generated in the fragile region 103, and the single-crystalsemiconductor substrate 101 is separated from the supporting substrate130 using the fragile region 103 as a separation region. Since thebonding layer 104 is bonded to the supporting substrate 130, an SOIlayer 102 having the same crystallinity as the single-crystalsemiconductor substrate 101 is left remaining over the supportingsubstrate 130.

Note that, instead of the heat treatment, the supporting substrate 130and the single-crystal semiconductor substrate 101 are bonded to eachother, and then the single-crystal semiconductor substrate is irradiatedwith a laser beam from the supporting substrate 130 side, whereby thefragile region 103 may be heated. As a result, the single-crystalsemiconductor substrate 101 can be separated from the supportingsubstrate 130 using the fragile region as a separation region.

After that, a surface of the SOI layer 102 is preferably planarized. Asa planarization method, CMP can be used. Alternatively, the surface ofthe SOI layer 102 can be irradiated with a laser beam and melted to beplanarized.

Next, through processes shown in FIGS. 9A to 9E and FIGS. 10A and 10B,an element layer 135 which includes a transistor using the SOI layer 102is formed. Next, a base substrate 136 is provided on the element layer135. By thermal pressure bonding of the base substrate 136 and theelement layer 135, the element layer 135 can be attached firmly to thebase substrate 136. Alternatively, the base substrate 136 can beattached firmly to the element layer 135 using an adhesive which is notshown (see FIG. 11D). As the base substrate 136, typical examples givenas the base substrate 100 can appropriately be used as described inEmbodiment Mode 1.

After that, a groove may be formed by irradiation of the element layer135 and the separation layer 131 with a laser beam from the basesubstrate 136 side so that a separation process to be performed latercan be conducted easily. As a laser beam used to form a groove, a laserbeam having a wavelength absorbed by any of the separation layer 131 andthe layers included in the element layer 135 is preferably used.Typically, a laser beam in the UV region, visible region, or infraredregion is selected as appropriate for irradiation.

Next, as shown in FIG. 12A, the element layer 135 is separated from thesupporting substrate 130 by a physical method. Alternatively, a liquidpenetrates into an interface of the separation layer 131 and theinsulating layer 132, and then the element layer 135 is separated fromthe supporting substrate 130.

Here, separation is caused at any of the interface of the separationlayer 131 and the insulating layer 132, the separation layer 131 and aninterface of the supporting substrate 130 and the separation layer 131,so that the element layer 135 can be separated from the supportingsubstrate 130.

When the element layer 135 and the base substrate 136 are separated fromthe supporting substrate 130, an adhesive sheet which can be separatedby light or heat is provided on at least one of the surfaces of thesupporting substrate 130 and the base substrate 136, one of thesupporting substrate 130 and the base substrate 136 is fixed, and theother is separated, so that separation can be conducted more easily. Atthis time, by provision of a supporting member for the other of thesupporting substrate 130 and the base substrate 136 which is not fixed,a separation process can be conducted easily.

Next, as shown in FIG. 12B, a flexible substrate 137 is attached firmlyto the insulating layer 132. As a material and an attaching method ofthe flexible substrate 137, the material and the attaching method of thebase substrate 136 can be used.

After that, when a plurality of semiconductor devices are included inthe element layer 135, the base substrate 136 and the flexible substrate137 may be divided and the plurality of semiconductor devices may be cutout. By such a process, a plurality of semiconductor devices can bemanufactured.

In this manner, the element layer including a field effect transistorusing the SOI layer 102 which is bonded to the supporting substrate 130is manufactured, and then a semiconductor device which is flexible andthin can be manufactured using the element layer. Since the SOI layer102 according to this embodiment mode is a single-crystal semiconductorwith uniform crystal orientation, a uniform and high-performance fieldeffect transistor can be obtained. In other words, it is possible tosuppress inhomogeneity of values of important transistorcharacteristics, such as threshold voltage and mobility, and to achievehigh performance such as high mobility. Further, since the barrier layer105 is provided between the base substrate 136 and the SOI layer 102,the SOI layer can be prevented from being contaminated by an impurityfrom the base substrate. Therefore, variation in characteristics of thetransistors formed in the element layer can be suppressed.

Further, after formation of the field effect transistor using the SOIlayer which is bonded to the supporting substrate, the element layerwith a field effect transistor is separated from the supportingsubstrate, so that a semiconductor device which is flexible and thin aremanufactured. Therefore, handling of the supporting substrate in amanufacturing process becomes easier and a yield can be improved.

Embodiment Mode 8

A semiconductor device using an SOI substrate described in EmbodimentModes 1 to 5 will be described with reference to FIGS. 13A to 13D andFIGS. 14A to 14B. Here, a mode in which a semiconductor device ismanufactured using the SOI substrate where the single-crystalsemiconductor substrate and the base substrate are bonded to each otherusing a bonding layer 104 as shown in FIGS. 6A to 6D and FIGS. 8A to 8Dwill be described. The SOI substrate where the single-crystalsemiconductor substrate and the base substrate are bonded to each otherwithout the bonding layer as shown in FIGS. 5A to 5D and FIGS. 7A to 7Dcan also be used. A supporting substrate may be bonded to the basesubstrate side of the SOI substrate. The SOI substrate is held by aholding member which holds the SOI substrate, whereby a semiconductordevice can be manufactured with high yield even if a flexible substratethat is easily bent is used. As an example of the holding member, aroller, a gripper, or the like can be given.

Similarly to FIG. 6A, as shown in FIG. 13A, a single-crystalsemiconductor substrate 101 is irradiated with ions accelerated by anelectric filed from a surface thereof, the ions are contained at apredetermined depth of the single-crystal semiconductor substrate toform a fragile region 103. Next, a cap layer 123 and a bonding layer 104are sequentially stacked over the surface of the single-crystalsemiconductor substrate 101. Next, heat treatment is performed to thesingle-crystal semiconductor substrate 101 at temperatures of greaterthan or equal to 250° C., preferably greater than or equal to 300° C.and less than 400° C., more preferably less than 350° C., so that thefragile region 103 is made to be more fragile. Here, since the cap layer123 is formed on the surface of the single-crystal semiconductorsubstrate 101, the fragile region 103 can be made to be more fragilewith flatness of the surfaces of the single-crystal semiconductorsubstrate 101 and the bonding layer 104 kept.

As shown in FIG. 13B, a separation layer 131 is formed on a supportingsubstrate 130 and an insulating layer 132 is formed on the separationlayer 131. Further, a bonding layer 140 is formed on a flexiblesubstrate 141. Next, the insulating layer 132 and the bonding layer 140provided for the flexible substrate 141 are bonded to each other bybeing disposed in contact with each other, so that the supportingsubstrate 130 and the flexible substrate 141 are bonded to each other.

Next, as shown in FIG. 13C, the flexible substrate 141 and the bondinglayer 104 formed over the single-crystal semiconductor substrate 101 arebonded to each other by being disposed in contact with each other, sothat the flexible substrate 141 and the single-crystal semiconductorsubstrate 101 are bonded to each other.

In order to form a favorable bond, at least one of the surfaces of theflexible substrate 141 and the bonding layer 104 may be activated. Forexample, the surface that is to form a bond is irradiated with an atomicbeam or an ion beam. When an atomic beam or an ion beam is used, aninert gas neutral atomic beam or inert gas ion beam of argon or the likecan be used. Alternatively, plasma irradiation or radical treatment isperformed. Further, at least one of bonding surfaces of the flexiblesubstrate having an insulating surface and the single-crystalsemiconductor substrate may be subjected to treatment by oxygen plasmaor washing with ozone water to be hydrophilic. Such a surface treatmentmakes it possible to easily perform bonding between different kinds ofmaterials even if temperatures of a heat treatment step is greater thanor equal to 250° C. and less than 400° C.

In FIG. 13D, the single-crystal semiconductor substrate 101 is separatedfrom the supporting substrate 130 and the flexible substrate 141 usingthe fragile region 103 as a separation region. Since the bonding layer104 is bonded to the supporting substrate 130, an SOI layer 102 havingthe same crystallinity as the single-crystal semiconductor substrate 101is left remaining over the supporting substrate 130.

Note that, instead of heat treatment which is performed before bondingthe single-crystal semiconductor substrate 101 to the flexible substrate141, the single-crystal semiconductor substrate 101 may be irradiatedwith a laser beam from the single-crystal semiconductor substrate 101side after bonding the single-crystal semiconductor substrate 101 to theflexible substrate 141 and the fragile region 103 may be heated. As aresult, the single-crystal semiconductor substrate 101 can be separatedfrom the flexible substrate 141 using the fragile region as a separationregion.

After that, a surface of the SOI layer 102 is preferably planarized. Asa planarization method, CMP can be used. Alternatively, the surface ofthe SOI layer 102 can be irradiated with a laser beam and melted to beplanarized.

Before the single-crystal semiconductor substrate 101 is separated fromthe supporting substrate 130 using the fragile region 103 as aseparation region, a trigger may be made so that separation can beconducted easily. When the single-crystal semiconductor substrate 101 isseparated from the supporting substrate 130, an adhesive sheet which canbe separated by light or heat is provided on at least one of thesurfaces of the supporting substrate 130 and the single-crystalsemiconductor substrate 101, one of the supporting substrate 130 and thesingle-crystal semiconductor substrate 101 is fixed, and the other isseparated, so that separation can be conducted more easily. At thistime, by provision of a supporting member for the other of thesupporting substrate 130 and the single-crystal semiconductor substrate101 which is not fixed, a separation process can be conducted easily.

Next, through the processes described in FIGS. 9A to 9E and FIGS. 10A to10B, an element layer 135 including a transistor using the SOI layer 102is formed. Next, a flexible substrate 142 is provided on the elementlayer 135. By thermal pressure bonding of he flexible substrate 142 andthe element layer 135, the flexible substrate 142 can be attached firmlyto the element layer 135. Alternatively, the flexible substrate 142 canbe attached firmly to the element layer 135 using an adhesive which isnot shown (see FIG. 14A). As the flexible substrate 142, typicalexamples given as the base substrate 100 can appropriately be used asdescribed at Embodiment Mode 1.

Next, as shown in FIG. 14B, a stack including the flexible substrate141, the element layer 135 and the flexible substrate 142 is separatedfrom the supporting substrate 130 by a physical method. Alternatively, aliquid is penetrated into an interface of the separation layer 131 andthe insulating layer 132, and then the stack including the flexiblesubstrate 141, the element layer 135 and the flexible substrate 142 isseparated from the supporting substrate 130.

Here, separation is caused at any of the interface of the separationlayer 131 and the insulating layer 132, the separation layer 131 and aninterface of the supporting substrate 130 and the separation layer 131,so that the element layer 135 can be separated from the supportingsubstrate 130.

Before the element layer 135 and the flexible substrate 142 areseparated from the supporting substrate 130 at the separation layer 131,a trigger may be made so that separation can be conducted easily. Whenthe element layer 135 and the flexible substrate 142 are separated fromthe supporting substrate 130, an adhesive sheet which can be separatedby light or heat is provided on at least one of the surfaces of thesupporting substrate 130 and the flexible substrate 142, one of thesupporting substrate 130 and the flexible substrate 142 is fixed, andthe other is separated, so that separation can be conducted more easily.At this time, by provision of a supporting member for the other of thesupporting substrate 130 and the flexible substrate 142 which is notfixed, a separation process can be conducted easily.

After that, when a plurality of semiconductor devices is included in theelement layer 135, the element layer 135 and the flexible substrates 141and 142 may be divided and a plurality of semiconductor devices may becut out. By such a process, a plurality of semiconductor devices can bemanufactured.

Further, after formation of the field effect transistor using the SOIlayer which is bonded to the supporting substrate, the element layerwith a field effect is separated from the supporting substrate, so thata semiconductor device which is flexible and thin is manufactured.Therefore, handling of the supporting substrate in a manufacturingprocess becomes easier and a yield can be improved.

In this manner, a field effect transistor can be manufactured using theSOI layer 102 that is bonded to the flexible substrate 141. Because theSOI layer 102 according to this embodiment mode is a single-crystalsemiconductor with uniform crystal orientation, a uniform andhigh-performance field effect transistor can be obtained. In otherwords, it is possible to suppress inhomogeneity of values of importanttransistor characteristics, such as threshold voltage and mobility, andto achieve high performance such as high mobility. Further, since thebarrier layer 105 is provided between the base substrate 100 and the SOIlayer 102, the SOI layer can be prevented from being contaminated by animpurity from the base substrate. Therefore, variation incharacteristics of the transistors formed in the element layer can besuppressed. Furthermore, a semiconductor device which is flexible andthin can be manufactured.

Embodiment Mode 9

FIG. 15 shows a structure of a microprocessor manufactured using the SOIsubstrate shown Embodiment Modes 1 to 5 as an example of semiconductordevices shown in Embodiment Modes 6 to 8. This microprocessor 200 has anarithmetic logic unit (ALU) 201, an ALU controller 202, an instructiondecoder 203, an interrupt controller 204, a timing controller 205, aregister 206, a register controller 207, a bus interface (Bus I/F) 208,a read-only memory (ROM) 209, and a ROM interface (ROM I/F) 210.

An instruction input to the microprocessor 200 through the bus interface208 is input to the instruction decoder 203, decoded therein, and theninput to the ALU controller 202, the interrupt controller 204, theregister controller 207, and the timing controller 205. The ALUcontroller 202, the interrupt controller 204, the register controller207, and the timing controller 205 conduct various controls based on thedecoded instruction. Specifically, the ALU controller 202 generatessignals for controlling the operation of the ALU 201. While themicroprocessor 200 is executing a program, the interrupt controller 204processes an interrupt request from an external input/output device or aperipheral circuit based on its priority or a mask state. The registercontroller 207 generates an address of the register 206, and reads andwrites data from and to the register 206 in accordance with the state ofthe microprocessor 200. The timing controller 205 generates signals forcontrolling timing of operation of the ALU 201, the ALU controller 202,the instruction decoder 203, the interrupt controller 204, and theregister controller 207. For example, the timing controller 205 isprovided with an internal clock generator for generating an internalclock signal CLK2 based on a reference clock signal CLK1, and suppliesthe internal clock signal CLK2 to the various above-mentioned circuits.Obviously, the microprocessor 200 shown in FIG. 15 is only an example inwhich the configuration is simplified and an actual microprocessors mayhave various configurations depending on the uses.

The above-described microprocessor 200 can achieve not only an increasein processing speed but also a reduction in power consumption because anintegrated circuit is formed using a single-crystal semiconductor layer(SOI layer) with uniform crystal orientation which is bonded to aflexible substrate having an insulating surface.

Embodiment Mode 10

Next, a structure of an RFCPU obtained using the SOI substrate shown inEmbodiment Modes 1 to 5 is described with reference to FIG. 16 as anexample of semiconductor devices having an arithmetic function thatenable contactless data transmission and reception, shown in EmbodimentModes 6 to 8. FIG. 16 shows an example of a computer that operates totransmit and receive signals to and from an external device by wirelesscommunication (such a computer is hereinafter referred to as an RFCPU).An RFCPU 211 has an analog circuit portion 212 and a digital circuitportion 213. The analog circuit portion 212 has a resonance circuit 214with a resonance capacitor, a rectifier circuit 215, a constant voltagecircuit 216, a reset circuit 217, an oscillator circuit 218, ademodulator circuit 219, a modulator circuit 220, and a power managementcircuit 230. The digital circuit portion 213 has an RF interface 221, acontrol register 222, a clock controller 223, an interface (a CPUinterface) 224, a central processing unit (CPU) 225, a random-accessmemory (RAM) 226, and a read-only memory (ROM) 227.

The operation of the RFCPU 211 having such a configuration is roughly asfollows. The resonance circuit 214 generates an induced electromotiveforce based on a signal received by an antenna 228. The inducedelectromotive force is stored in a capacitor portion 229 through therectifier circuit 215. This capacitor portion 229 is preferably formedusing a capacitor such as a ceramic capacitor or an electric doublelayer capacitor. The capacitor portion 229 does not need to beintegrated with the RFCPU 211 and it is acceptable as long as thecapacitor portion 229 is mounted as a different component on a substratehaving an insulating surface which is included in the RFCPU 211.

The reset circuit 217 generates a signal for resetting and initializingthe digital circuit portion 213. For example, the reset circuit 217generates a signal which rises after rise in the power supply voltagewith delay as a reset signal. The oscillator circuit 218 changes thefrequency and duty ratio of a clock signal in response to a controlsignal generated by the constant voltage circuit 216. The demodulatorcircuit 219 formed using a low-pass filter binarizes the amplitude of,for example, a received amplitude-modulated (ASK) signal. The modulatorcircuit 220 varies the amplitude of an amplitude-modulated (ASK)transmission signal and transmits the signal. The modulator circuit 220changes the amplitude of a communication signal by changing a resonancepoint of the resonance circuit 214. The clock controller 223 generates acontrol signal for changing the frequency and duty ratio of a clocksignal in accordance with the power supply voltage or a consumptioncurrent of the central processing unit 225. The power supply voltage ismonitored by the power management circuit 230.

A signal input from the antenna 228 to the RFCPU 211 is demodulated bythe demodulator circuit 219 and then decomposed into a control command,data, and the like by the RF interface 221. The control command isstored in the control register 222. The control command includes readingof data stored in the read-only memory 227, writing of data to therandom-access memory 226, an arithmetic instruction to the centralprocessing unit 225, and the like. The central processing unit 225accesses the read-only memory 227, the random-access memory 226, and thecontrol register 222 via the interface 224. The interface 224 has afunction of generating an access signal for any of the read-only memory227, the random-access memory 226, and the control register 222 based onan address the central processing unit 225 requests.

As an arithmetic method of the central processing unit 225, a method maybe employed in which the read-only memory 227 stores an operating system(OS) and a program is read and executed at the time of startingoperation. Alternatively, a method may be employed in which a dedicatedarithmetic circuit is provided and arithmetic processing is conductedusing hardware. In a method in which both hardware and software areused, part of processing is conducted by a dedicated arithmetic circuitand the other part of the arithmetic processing is conducted by thecentral processing unit 225 using a program.

The above-described RFCPU 211 can achieve not only an increase inprocessing speed but also a reduction in power consumption because anintegrated circuit is formed using a single-crystal semiconductor layer(SOI layer) with uniform crystal orientation which is bonded to aflexible substrate having an insulating surface. This makes it possibleto ensure the operation for a long period of time even when thecapacitor portion 229 which supplies power is downsized.

Embodiment Mode 11

Next, a structure of a display panel obtained using the SOI substratedescribed in Embodiment Modes 1 to 5 will be described as an example ofsemiconductor devices described in Embodiment Modes 6 to 8, withreference to FIG. 17.

SOI layers 102 exemplified in Embodiment Modes 1 to 5 can be bonded to alarge flexible substrate with which a display panel is manufactured.FIG. 17 shows a case in which SOI layers 102 are bonded to a basesubstrate 100 which is a large-sized flexible substrate having aninsulating surface. Since a plurality of display panels are cut out fromthe large-sized flexible substrate having an insulating surface, the SOIlayers 102 are preferably bonded to formation regions of display panels231 in the base substrate 100. Since the flexible large-sized substratehaving an insulating surface has a larger area than a single-crystalsemiconductor substrate, a plurality of the SOI layers 102 arepreferably arranged as shown in FIG. 17. The display panel 231 includesa scanning line driver circuit region 232, a signal line driver circuitregion 233 and a pixel formation region 234. The SOI layer 102 is bondedto the base substrate 100 which is the large-sized flexible substratehaving an insulating surface, so that the scanning line driver circuitregion 232, the signal line driver circuit region 233 and the pixelformation region 234 are included.

FIGS. 18A and 18B show an example of a pixel of the display panel inwhich a pixel transistor is formed using the SOI layer 102. FIG. 18A isa plane view of the pixel. In a pixel formed over the SOI layer, a gatewiring 235 and a source wiring 236 which intersect with each other areformed. The source wiring 236 and a drain electrode 242 are connected tothe SOI layer 102, and a pixel electrode 237 is connected to the drainelectrode 242. FIG. 18B is a cross sectional view taken along a line J-Kin FIG. 18A.

In FIG. 18B, a silicon nitride layer and a silicon oxide layer arestacked as a barrier layer 105 over the base substrate 100. The SOIlayer 102 is bonded to the base substrate 100 which is flexible and hasan insulating surface by a bonding layer 104. A pixel electrode 237 isprovided over an insulating layer 118. Columnar spacers 240 are providedso as to fill concave step portions in contact holes for connecting theSOI layers 102 and the source wirings 236. A counter substrate 238 isprovided with a counter electrode 239 and liquid crystal layers 241 areformed in spaces formed by the columnar spacers 240.

In this manner, the SOI layers are formed over the flexible large-sizedsubstrate having an insulating surface with which the display panel ismanufactured and the transistors using the SOI layers can be formed.Since the transistors formed using the SOI layers are more excellent inall the operating characteristics such as a current driving capabilitythan those of amorphous silicon transistors, the size of the transistorscan be reduced. Accordingly, an aperture ratio of the pixel in thedisplay panel can be improved. Further, since a microprocessor describedin FIG. 15 can also be formed, the display panel can have a function ofa computer. A display in which data can be input and output in anon-contact manner can also be manufactured.

Embodiment Mode 12

An ion irradiation method, which is one aspect of the present invention,is considered below.

In the present invention, a single-crystal semiconductor substrate isirradiated with ions that are derived from hydrogen (H) (hereafterreferred to as “hydrogen ion species”). More specifically, a hydrogengas or a gas which contains hydrogen in its composition is used as asource material; a hydrogen plasma is generated; and a single-crystalsemiconductor substrate is irradiated with the hydrogen ion species inthe hydrogen plasma.

(Ions in Hydrogen Plasma)

In such a hydrogen plasma as described above, hydrogen ion species suchas H⁺, H₂ ⁺, and H₃ ⁺ are present. Here are listed reaction equationsfor reaction processes (formation processes, destruction processes) ofthe hydrogen ion species.

e+H→e+H⁺+e (1)

e+H₂→e+H₂ ⁺+e (2)

e+H₂→e+(H₂)*→e+H+H   (3)

e+H₂ ⁺→e+(H₂ ⁺)*→e+H⁺+H   (4)

H₂ ⁺+H₂→H₃ ⁺+H   (5)

H₂ ⁺+H₂→H⁺+H+H₂   (6)

e+H₃ ⁺→e+H⁺+H+H   (7)

e+H₃ ⁺→H₂+H   (8)

e+H₃ ⁺→H+H+H   (9)

FIG. 19 is an energy diagram which schematically shows some of the abovereactions. Note that the energy diagram shown in FIG. 19 is merely aschematic diagram and does not depict the relationships of energies ofthe reactions exactly.

(H₃ ⁺ Formation Process)

As shown above, H₃ ⁺ is mainly produced through the reaction processthat is represented by the reaction equation (5). On the other hand, asa reaction that competes with the reaction equation (5), there is thereaction process represented by the reaction equation (6). For theamount of H ³ ⁺ to increase, at the least, it is necessary that thereaction of the reaction equation (5) occur more often than the reactionof the reaction equation (6) (note that, because there are also otherreactions, (7), (8), and (9), through which the amount of H₃ ⁺ isdecreased, the amount of H₃ ⁺ is not necessarily increased even if thereaction of the reaction equation (5) occurs more often than thereaction of the reaction equation (6)). In contrast, when the reactionof the reaction equation (5) occurs less often than the reaction of thereaction equation (6), the proportion of H₃ ⁺ in a plasma is decreased.

The amount of increase in the product on the right-hand side (rightmostside) of each reaction equation given above depends on the density of asource material on the left-hand side (leftmost side) of the reactionequation, the rate coefficient of the reaction, and the like. Here, itis experimentally confirmed that, when the kinetic energy of H₂ ⁺ islower than about 11 eV, the reaction of the reaction equation (5) is themain reaction (that is, the rate coefficient of the reaction equation(5) is sufficiently higher than the rate coefficient of the reactionequation (6)) and that, when the kinetic energy of H₂ ⁺ is higher thanabout 11 eV, the reaction of the reaction equation (6) is the mainreaction.

A force is exerted on a charged particle by an electric field and thecharged particle gains kinetic energy. The kinetic energy corresponds tothe amount of decrease in potential energy due to an electric field. Forexample, the amount of kinetic energy a given charged particle gainsbefore colliding with another particle is equal to the differencebetween a potential energy at a potential before the charged particlemoves and a potential energy at a potential before the collision. Thatis, in a situation where a charged particle can travel a long distancein an electric field without colliding with another particle, thekinetic energy (or the average thereof) of the charged particle tends tobe higher than that in a situation where the charged particle cannot.Such a tendency toward an increase in kinetic energy of a chargedparticle can be shown in a situation where the mean free path of aparticle is long, that is, in a situation where pressure is low.

Even in a situation where the mean free path is short, the kineticenergy of a charged particle is high if the charged particle can gain ahigh amount of kinetic energy while traveling through the path. That is,it can be said that, even in the situation where the mean free path isshort, the kinetic energy of a charged particle is high if the potentialdifference is large.

This is applied to H₂ ⁺. Assuming that an electric field is present asin a plasma generation chamber, the kinetic energy of H₂ ⁺ is high in asituation where the pressure inside the chamber is low and the kineticenergy of H₂ ⁺ is low in a situation where the pressure inside thechamber is high. That is, because the reaction of the reaction equation(6) is the main reaction in the situation where the pressure inside thechamber is low, the amount of H₃ ⁺ tends to be decreased, and becausethe reaction of the reaction equation (5) is the main reaction in thesituation where the pressure inside the chamber is high, the amount ofH₃ ⁺ tends to be increased. In addition, in a situation where anelectric field in a plasma generation region is high, that is, in asituation where the potential difference between given two points islarge, the kinetic energy of H₂ ⁺ is high, and in the oppositesituation, the kinetic energy of H₂ ⁺ is low. That is, because thereaction of the reaction equation (6) is the main reaction in thesituation where the electric field is high, the amount of H₃ ⁺ tends tobe decreased, and because the reaction of the reaction equation (5) isthe main reaction in a situation where the electric field is low, theamount of H₃ ⁺ tends to be increased.

(Differences Depending on Ion Source)

Here, an example, in which the proportions of ion species(particularly,the proportion of H₃ ⁺) are different, is described. FIG. 20 is a graphshowing the results of mass spectrometry of ions that are generated froma 100% hydrogen gas (with the pressure of an ion source of 4.7×10⁻² Pa).Note that this mass spectrometry was performed by measurement of ionsthat were extracted from the ion source. The horizontal axis representsion mass. In the spectrum, the mass 1 peak, the mass 2 peak, and themass 3 peak correspond to H⁺, H₂ ⁺, and H₃ ⁺, respectively. The verticalaxis represents the intensity of the spectrum, which corresponds to thenumber of ions. In FIG. 20, the number of ions with different masses isexpressed as a relative proportion where the number of ions with a massof 3 is defined as 100. It can be seen from FIG. 20 that the ratiobetween ion species that are generated from the ion source, i.e., theratio between H⁺, H₂ ⁺, and H₃ ⁺, is about 1:1:8. Note that ions at sucha ratio can also be generated by an ion doping apparatus which has aplasma source portion (ion source) that generates a plasma, anextraction electrode that extracts an ion beam from the plasma, and thelike.

FIG. 21 is a graph showing the results of mass spectrometry of ions thatare generated from PH₃ when an ion source different from that for thecase of FIG. 20 is used and the pressure of the ion source is about3×10⁻³ Pa. The results of this mass spectrometry focus on the hydrogenion species. In addition, the mass spectrometry was performed bymeasurement of ions that were extracted from the ion source. As in FIG.20, the horizontal axis represents ion mass, and the mass 1 peak, themass 2 peak, and the mass 3 peak correspond to H⁺, H₂ ⁺, and H₃ ⁺,respectively. The vertical axis represents the intensity of a spectrumcorresponding to the number of ions. It can be seen from FIG. 21 thatthe ratio between ion species in a plasma, i.e., the ratio between H⁺,H₂ ⁺, and H₃ ⁺, is about 37:56:7. Note that, although FIG. 21 shows thedata obtained when the source gas is PH₃, the ratio between the hydrogenion species is about the same when a 100% hydrogen gas is used as asource gas, as well.

In the case of the ion source from which the data shown in FIG. 21 isobtained, H₃ ⁺, of H⁺, H₂ ⁺, and H₃ ⁺ is generated at a proportion ofonly about 7%. On the other hand, in the case of the ion source fromwhich the data shown in FIG. 20 is obtained, the proportion of H₃ ⁺ canbe up to 50% or higher (under the aforementioned conditions, about 80%).This is thought to result from the pressure and electric field inside achamber, which is clearly shown in the above consideration.

(H₃ ⁺ Irradiation Mechanism)

When a plasma that contains a plurality of ion species as shown in FIG.20 is generated and a single-crystal semiconductor substrate isirradiated with the generated ion species without any mass separationbeing performed, the surface of the single-crystal semiconductorsubstrate is irradiated with each of H⁺, H₂ ⁺, and H₃ ⁺ ions. In orderto reproduce the mechanism, from the irradiation with ions to theformation of an ion-introduced region, the following five types ofmodels are considered.

Model 1, where the ion species used for irradiation is H⁺, which isstill H⁺ (H) after the irradiation.

Model 2, where the ion species used for irradiation is H₂ ⁺, which isstill H₂ ⁺ (H₂) after the irradiation.

Model 3, where the ion species used for irradiation is H₂ ⁺, whichsplits into two H atoms (H⁺ ions) after the irradiation.

Model 4, where the ion species used for irradiation is H₃ ⁺, which isstill H₃ ⁺ (H₃) after the irradiation.

Model 5, where the ion species used for irradiation is H₃ ⁺, whichsplits into three H atoms (H⁺ ions) after the irradiation.

(Comparison of Simulation Results with Measured Values)

Based on the above models, the irradiation of an Si substrate withhydrogen ion species was simulated. As simulation software, SRIM, theStopping and Range of Ions in Matter (an improved version of TRIM, theTransport of Ions in Matter, which is simulation software for ionintroduction processes by a Monte Carlo method) was used. Note that, forthe calculation, a calculation based on Model 2 was performed with theH₂ ⁺ replaced by H⁺ that has twice the mass. In addition, a calculationbased on Model 4 was performed with the H₃ ⁺ replaced by H⁺ that hasthree times the mass. Furthermore, a calculation based on Model 3 wasperformed with the H₂ ⁺ replaced by H⁺ that has half the kinetic energy,and a calculation based on Model 5, with the H₃ ⁺ replaced by H⁺ thathas one-third the kinetic energy.

Note that SRIM is software intended for amorphous structures, but SRIMcan be applied to cases where irradiation with the hydrogen ion speciesis performed with high energy at a high dose. This is because thecrystal structure of an Si substrate changes into a non-single-crystalstructure due to the collision of the hydrogen ion species with Siatoms.

FIG. 22 shows the calculation results obtained when irradiation with thehydrogen ion species (irradiation with 100,000 atoms for H) is performedusing Models 1 to 5. FIG. 22 also shows the hydrogen concentration(secondary ion mass spectroscopy (SIMS) data) in an Si substrateirradiated with the hydrogen ion species of FIG. 20. The results ofcalculations performed using Models 1 to 5 are expressed on the verticalaxis (right axis) as the number of hydrogen atoms, and the SIMS data isexpressed on the vertical axis (left axis) as the density of hydrogenatoms. The horizontal axis represents depth from the surface of an Sisubstrate. If the SIMS data, which is measured values, is compared withthe calculation results, Models 2 and 4 obviously do not match the peaksof the SIMS data and a peak corresponding to Model 3 cannot be observedin the SIMS data. This shows that the contribution of each of Models 2to 4 is relatively small. Considering that the kinetic energy of ions ison the order of kiloelectron volts whereas the H—H bond energy is onlyabout several electron volts, it is thought that the contribution ofeach of Models 2 and 4 is small because H₂ ⁺ and H₃ ⁺ mostly split intoH⁺ or H by colliding with Si atoms.

Accordingly, Models 2 to 4 will not be considered hereinafter. FIGS. 23to 25 each show the calculation results obtained when irradiation withthe hydrogen ion species (irradiation with 100,000 atoms for H) isperformed using Models 1 and 5. FIGS. 23 to 25 also each show thehydrogen concentration (SIMS data) in an Si substrate irradiated withthe hydrogen ion species of FIG. 20, and the simulation results fittedto the SIMS data (hereinafter referred to as a fitting function). Here,FIG. 23 shows the case where the accelerating voltage is 80 kV; FIG. 24,the case where the accelerating voltage is 60 kV; and FIG. 25, the casewhere the accelerating voltage is 40 kV. Note that the results ofcalculations performed using Models 1 and 5 are expressed on thevertical axis (right axis) as the number of hydrogen atoms, and the SIMSdata and the fitting function are expressed on the vertical axis (leftaxis) as the density of hydrogen atoms. The horizontal axis representsdepth from the surface of an Si substrate.

The fitting function is obtained using the calculation formula givenbelow, in consideration of Models 1 and 5. Note that, in the calculationformula, X and Y represent fitting parameters and V represents volume.

(Fitting Function)=X/V×(Data of Model 1)+Y/V×(Data of Model 5)

In consideration of the ratio between ion species used for actualirradiation (H⁺:H₂ ⁺:H₃ ⁺ is about 1:1:8), the contribution of H₂⁺(i.e., Model 3) should also be considered; however, Model 3 is excludedfrom the consideration given here for the following reasons:

Because the amount of hydrogen introduced through the irradiationprocess represented by Model 3 is lower than that introduced through theirradiation process of Model 5, there is no significant influence evenif Model 3 is excluded from the consideration (no peak appears in theSIMS data either).

Model 3, the peak position of which is close to that of Model 5, islikely to be obscured by channeling (movement of atoms due to crystallattice structure) that occurs in Model 5. That is, it is difficult toestimate fitting parameters for Model 3. This is because this simulationassumes amorphous Si and the influence due to crystallinity is notconsidered.

FIG. 26 lists the aforementioned fitting parameters. At any of theaccelerating voltages, the ratio of the amount of H introduced accordingto Model 1 to that introduced according to Model 5 is about 1:42 to 1:45(the amount of H in Model 5, when the amount of H in Model 1 is definedas 1, is about 42 to 45), and the ratio of the number of ions used forirradiation, H⁺ (Model 1) to that of H₃ ⁺ (Model 5) is about 1:14 to1:15 (the amount of H₃ ⁺ in Model 5, when the amount of H⁺ in Model 1 isdefined as 1, is about 14 to 15). Considering that Model 3 is notconsidered and the calculation assumes amorphous Si, it can be said thatvalues close to that of the ratio between ion species used for actualirradiation (H⁺:H₂ ⁺:H₃ ⁺ is about 1:1:8) is obtained.

(Effects of Use of H₃ ⁺)

A plurality of benefits resulting from H₃ ⁺ can be enjoyed byirradiation of a substrate with hydrogen ion species with a higherproportion of H₃ ⁺ as shown in FIG. 20. For example, because H₃ ⁺ splitsinto H⁺, H, or the like to be introduced into a substrate, ionintroduction efficiency can be improved compared with the case ofirradiation mainly with H⁺ or H₂ ⁺. This leads to an improvement in anSOI substrate production efficiency. In addition, because the kineticenergy of H⁺ or H after H₃ ⁺ splits similarly tends to be low, H₃ ⁺ issuitable for manufacture of thin semiconductor layers.

Note that, in this specification, a method is described in which an iondoping apparatus that is capable of irradiation with the hydrogen ionspecies as shown in FIG. 20 is used in order to efficiently performirradiation with H₃ ⁺. Ion doping apparatuses are inexpensive andexcellent for use in large-area treatment. Therefore, by irradiationwith H₃ ⁺ by use of such an ion doping apparatus, significant effectssuch as an improvement in semiconductor characteristics, an increase inarea, a reduction in costs, and an improvement in production efficiencycan be obtained. On the other hand, if first priority is given toirradiation with H₃ ⁺, there is no need to interpret the presentinvention as being limited to the use of an ion doping apparatus.

This application is based on Japanese Patent Application serial no.2007-112239 filed with Japan Patent Office on Apr. 20, 2007, the entirecontents of which are hereby incorporated by reference.

REFERENCE NUMERALS

100: base substrate, 101: single-crystal semiconductor substrate, 102:SOI layer, 103: fragile region, 104: bonding layer, 105: barrier layer,107: silicon layer, 108: element isolation insulting layer, 109: gateinsulating layer, 110: gate electrode, 111: sidewall insulating layer,112: impurity region, 113: impurity region, 114: insulating layer, 115:interlayer insulating layer, 116: contact hole, 117: contact plug, 118:insulating layer, 119: wiring, 120: barrier layer, 121: insulatinglayer, 122: pressure member, 123: cap layer, 124: silicon nitride layer,125: silicon oxide layer, 130: supporting substrate, 131: separationlayer, 132: insulating layer, 135: element layer, 136: base substrate,137: flexible substrate, 140: bonding layer, 141: flexible substrate,142: flexible substrate, 200: microprocessor, 201: arithemetic logicunit, 202: ALU controller, 203: instruction decoder, 204: interruptcontroller, 205: timing controller, 206: register, 207: registercontroller, 208: bus interface, 209: read-only memory, 210: ROMinterface, 211: RFCPU, 212: analog circuit portion, 213: digital circuitportion, 214: resonance circuit, 215: rectifer circuit, 216: constantvoltage circuit, 217: reset circuit, 218: oscillator circuit, 219:demodulator circuit, 220: modulator circuit, 221: RF interface, 222:control register, 223: clock controller, 224: interface, 225: centralprocessing unit, 226: random-access memory, 227: read-only memory, 228:antenna, 229: capacitor portion, 230: power management circuit, 231:display panel, 232: scanning line driver circuit region, 223: signalline driver circuit region, 234: pixel formation region, 235: gatewiring, 236: source wiring, 237: pixel electrode, 238: countersubstrate, 239: counter electrode, 240: columnar spacer, 241: liquidcrystal layer, 242: drain electrode

1. A method for manufacturing an SOI substrate, comprising the steps of:irradiating a single-crystal semiconductor substrate with a plurality ofions of a single atom to form a fragile region at a predetermined depthin the single-crystal semiconductor substrate; performing heat treatmentto make the fragile region more fragile; bonding the single-crystalsemiconductor substrate and a flexible substrate having an insulatingsurface to each other; and separating the single-crystal semiconductorsubstrate such that a single-crystal semiconductor layer is leftremaining over the flexible substrate.
 2. A method for manufacturing anSOI substrate, comprising the steps of: forming a separation layer overa supporting substrate; forming an insulating layer over the separationlayer; irradiating a single-crystal semiconductor substrate with aplurality of ions of a single atom to form a fragile region at apredetermined depth in the single-crystal semiconductor substrate;performing heat treatment to make the fragile region more fragile;bonding the single-crystal semiconductor substrate and the insulatinglayer formed over the supporting substrate; separating thesingle-crystal semiconductor substrate such that a single-crystalsemiconductor layer is left remaining over the supporting substrate;providing a flexible substrate having an insulating surface on thesingle-crystal semiconductor layer; and separating the flexiblesubstrate from the supporting substrate at the separation layer.
 3. Amethod for manufacturing an SOI substrate according to claim 1, whereinthe performing heat treatment is performed in a state where a pressuremember is provided over the single-crystal semiconductor substrate.
 4. Amethod for manufacturing an SOI substrate according to claim 1, whereinthe performing heat treatment is performed in a state where a cap layeris formed over a surface of the single-crystal semiconductor substrate.5. A method for manufacturing an SOI substrate according to claim 1,wherein the single-crystal semiconductor substrate is covered by asilicon oxide layer which is formed by a chemical vapor deposition usingan organic silane.
 6. A method for manufacturing an SOI substrateaccording to claim 1, wherein the performing heat treatment is performedat less than a temperature at which the fragile region is separated anda temperature at which the fragile region is more fragile.
 7. A methodfor manufacturing an SOI substrate according to claim 1, wherein theperforming heat treatment is performed at temperatures of greater thanor equal to 250° C. and less than 400° C.
 8. A method for manufacturingan SOI substrate according to claim 2, wherein the performing heattreatment is performed in a state where a pressure member is providedover the single-crystal semiconductor substrate.
 9. A method formanufacturing an SOI substrate according to claim 2, wherein theperforming heat treatment is performed in a state where a cap layer isformed over a surface of the single-crystal semiconductor substrate. 10.A method for manufacturing an SOI substrate according to claim 2,wherein the single-crystal semiconductor substrate is covered by asilicon oxide layer which is formed by a chemical vapor deposition usingan organic silane.
 11. A method for manufacturing an SOI substrateaccording to claim 2, wherein the performing heat treatment is performedat less than a temperature at which the fragile region is separated anda temperature at which the fragile region is more fragile.
 12. A methodfor manufacturing an SOI substrate according to claim 2, wherein theperforming heat treatment is performed at temperatures of greater thanor equal to 250° C. and less than 400° C.
 13. A method for manufacturinga semiconductor device, comprising the steps of: irradiating asingle-crystal semiconductor substrate with a plurality of ions to forma fragile region at a predetermined depth in the single-crystalsemiconductor substrate; performing heat treatment to make the fragileregion more fragile; bonding the single-crystal semiconductor substrateand a flexible substrate having an insulating surface to each other;separating the single-crystal semiconductor substrate such that asingle-crystal semiconductor layer is left remaining over the flexiblesubstrate; and forming a semiconductor element using the single-crystalsemiconductor layer.
 14. A method for manufacturing a semiconductordevice, comprising the steps of: forming a separation layer over asupporting substrate; forming an insulating layer over the separationlayer; irradiating a single-crystal semiconductor substrate with aplurality of ions of a single atom to form a fragile region at apredetermined depth in the single-crystal semiconductor substrate;performing heat treatment to make the fragile region more fragile;bonding the single-crystal semiconductor substrate and the insulatinglayer formed over the supporting substrate to each other separating thesingle-crystal semiconductor substrate such that a single-crystalsemiconductor layer is left remaining over the supporting substrate;forming an element layer having a semiconductor element using thesingle-crystal semiconductor layer; providing a flexible substratehaving an insulating surface over the element layer; and separating thesupporting substrate from the element layer at the separation layer. 15.A method for manufacturing a semiconductor device, comprising the stepsof: forming a separation layer on a supporting substrate, providing afirst flexible substrate having an insulating surface over theseparation layer; irradiating a single-crystal semiconductor substratewith a plurality of ions of a single atom to form a fragile region at apredetermined depth; performing heat treatment to make the fragileregion more fragile; bonding the single-crystal semiconductor substrateto the first flexible substrate; separating the single-crystalsemiconductor substrate such that a single-crystal semiconductor layeris left remaining over the supporting substrate; forming an elementlayer having a semiconductor element using the single-crystalsemiconductor layer; providing a second flexible substrate having aninsulating surface on the element layer; and separating the supportingsubstrate from the first flexible substrate at the separation layer. 16.A method for manufacturing a semiconductor device according to claim 13,wherein the performing heat treatment is performed in a state where apressure member is provided over the single-crystal semiconductorsubstrate.
 17. A method for manufacturing a semiconductor deviceaccording to claim 13, wherein the performing heat treatment isperformed in a state where a cap layer is formed over a surface of thesingle-crystal semiconductor substrate.
 18. A method for manufacturing asemiconductor device according to claim 13, wherein the single-crystalsemiconductor substrate is covered by a silicon oxide layer which isformed by a chemical vapor deposition using an organic silane.
 19. Amethod for manufacturing a semiconductor device according to claim 13,wherein the performing heat treatment is performed at less than atemperature at which the fragile region is separated and a temperatureat which the fragile region is more fragile.
 20. A method formanufacturing a semiconductor device according to claim 13, wherein theperforming heat treatment is performed at temperatures of greater thanor equal to 250° C. and less than 400° C.
 21. A method for manufacturinga semiconductor device according to claim 14, wherein the performingheat treatment is performed in a state where a pressure member isprovided over the single-crystal semiconductor substrate.
 22. A methodfor manufacturing a semiconductor device according to claim 14, whereinthe performing heat treatment is performed in a state where a cap layeris formed over a surface of the single-crystal semiconductor substrate.23. A method for manufacturing a semiconductor device according to claim14, wherein the single-crystal semiconductor substrate is covered by asilicon oxide layer which is formed by a chemical vapor deposition usingan organic silane.
 24. A method for manufacturing a semiconductor deviceaccording to claim 14, wherein the performing heat treatment isperformed at less than a temperature at which the fragile region isseparated and a temperature at which the fragile region is more fragile.25. A method for manufacturing a semiconductor device according to claim14, wherein the performing heat treatment is performed at temperaturesof greater than or equal to 250° C. and less than 400° C.
 26. A methodfor manufacturing a semiconductor device according to claim 15, whereinthe performing heat treatment is performed in a state where a pressuremember is provided over the single-crystal semiconductor substrate. 27.A method for manufacturing a semiconductor device according to claim 15,wherein the performing heat treatment is performed in a state where acap layer is formed over a surface of the single-crystal semiconductorsubstrate.
 28. A method for manufacturing a semiconductor deviceaccording to claim 15, wherein the single-crystal semiconductorsubstrate is covered by a silicon oxide layer which is formed by achemical vapor deposition using an organic silane.
 29. A method formanufacturing a semiconductor device according to claim 15, wherein theperforming heat treatment is performed at less than a temperature atwhich the fragile region is separated and a temperature at which thefragile region is more fragile.
 30. A method for manufacturing asemiconductor device according to claim 15, wherein the performing heattreatment is performed at temperatures of greater than or equal to 250°C. and less than 400° C.